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Class Information
Number: 257/E21.345
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > Characterized by the angle between the ion beam and the crystal planes or the main crystal surface (epo)
Description: This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265F.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
6326273 Method of fabricating a field effect transistor with trapezoidal shaped gate dielectric and/or gate electrode Dec. 4, 2001
6323106 Dual nitrogen implantation techniques for oxynitride formation in semiconductor devices Nov. 27, 2001
6323095 Method for reducing junction capacitance using a halo implant photomask Nov. 27, 2001
6319798 Method for reducing lateral dopant gradient in source/drain extension of MOSFET Nov. 20, 2001
6320236 Optimization of logic gates with criss-cross implants to form asymmetric channel regions Nov. 20, 2001
6320235 Apparatus having low resistance angled implant regions Nov. 20, 2001
6319762 Method for fabricating poly-spacers Nov. 20, 2001
6316806 Trench transistor with a self-aligned source Nov. 13, 2001
6316318 Angled implant to build MOS transistors in contact holes Nov. 13, 2001
6313036 Method for producing semiconductor device Nov. 6, 2001
6312997 Low voltage high performance semiconductor devices and methods Nov. 6, 2001
6307246 Semiconductor resurf devices formed by oblique trench implantation Oct. 23, 2001
6306712 Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processing Oct. 23, 2001
6306738 Modulation of gate polysilicon doping profile by sidewall implantation Oct. 23, 2001
6303492 Expanded implantation of contact holes Oct. 16, 2001
6300656 Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity types Oct. 9, 2001
6300205 Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions Oct. 9, 2001
6300182 Field effect transistor having dual gates with asymmetrical doping for reduced threshold voltage Oct. 9, 2001
6297098 Tilt-angle ion implant to improve junction breakdown in flash memory application Oct. 2, 2001
6297101 Method for producing an MOS transistor structure with elevated body conductivity Oct. 2, 2001
6297111 Self-aligned channel transistor and method for making same Oct. 2, 2001
6297114 Semiconductor device and process and apparatus of fabricating the same Oct. 2, 2001
6291325 Asymmetric MOS channel structure with drain extension and method for same Sep. 18, 2001
6287908 Transistor device configurations for high voltage applications and improved device performance Sep. 11, 2001
6287926 Self aligned channel implant, elevated S/D process by gate electrode damascene Sep. 11, 2001
6288425 SOI-MOSFET device Sep. 11, 2001
6287906 Semiconductor device having MOS transistor and method of manufacturing the same Sep. 11, 2001
6284615 Method and apparatus for the selective doping of semiconductor material by ion implantation Sep. 4, 2001
6284630 Method for fabrication of abrupt drain and source extensions for a field effect transistor Sep. 4, 2001
6281094 Method of fabricating semiconductor device capable of providing MOSFET which is improved in a threshold voltage thereof Aug. 28, 2001
6274437 Trench gated power device fabrication by doping side walls of partially filled trench Aug. 14, 2001
6274901 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 14, 2001
6271565 Asymmetrical field effect transistor Aug. 7, 2001
6268640 Forming steep lateral doping distribution at source/drain junctions Jul. 31, 2001
6265254 Semiconductor integrated circuit devices and a method of manufacturing the same Jul. 24, 2001
6255227 Etching process of CoSi2 layers Jul. 3, 2001
6255174 Mos transistor with dual pocket implant Jul. 3, 2001
6255175 Fabrication of a field effect transistor with minimized parasitic Miller capacitance Jul. 3, 2001
6255178 Method for forming transistors with raised source and drains and device formed thereby Jul. 3, 2001
RE37228 Method of fabricating semiconductor device Jun. 12, 2001
6245622 Method for fabricating semiconductor integrated circuit device including step of forming self-aligned metal silicide film Jun. 12, 2001
6246093 Hybrid surface/buried-channel MOSFET Jun. 12, 2001
6246096 Totally self-aligned transistor with tungsten gate Jun. 12, 2001
6242329 Method for manufacturing asymmetric channel transistor Jun. 5, 2001
6235564 Method of manufacturing MISFET May. 22, 2001
6232192 Method of manufacturing semiconductor device having sidewall portions removed May. 15, 2001
6229198 Non-uniform gate doping for reduced overlap capacitance May. 8, 2001
6229177 Semiconductor with laterally non-uniform channel doping profile May. 8, 2001
6229184 Semiconductor device with a modulated gate oxide thickness May. 8, 2001
6225663 Semiconductor device having SOI structure and method of fabricating the same May. 1, 2001

1 2 3 4 5 6 7 8 9 10 11 12 13 14

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