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Class Information
Number: 257/E21.345
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > Characterized by the angle between the ion beam and the crystal planes or the main crystal surface (epo)
Description: This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265F.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
6927151 Method of manufacturing semiconductor device Aug. 9, 2005
6927130 Method of manufacturing a trench gate type field effect transistor Aug. 9, 2005
6924216 Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device Aug. 2, 2005
6919248 Angled implant for shorter trench emitter Jul. 19, 2005
6919610 Power semiconductor device having RESURF layer Jul. 19, 2005
6911384 Gate structure with independently tailored vertical doping profile Jun. 28, 2005
6909144 MIS transistor having an LDD structure Jun. 21, 2005
6908823 Method of manufacturing a semiconductor device Jun. 21, 2005
6908822 Semiconductor device having an insulating layer and method for forming Jun. 21, 2005
6905976 Structure and method of forming a notched gate field effect transistor Jun. 14, 2005
6906360 Structure and method of making strained channel CMOS transistors having lattice-mismatched epitaxial extension and source and drain regions Jun. 14, 2005
6902971 Transistor sidewall spacer stress modulation Jun. 7, 2005
6900101 LDMOS transistors and methods for making the same May. 31, 2005
6897526 Semiconductor device and process for producing the same May. 24, 2005
6891235 FET with T-shaped gate May. 10, 2005
6888205 Metal oxide semiconductor field-effect transistor having a gate oxide layer with portions of different thicknesses and associated methods May. 3, 2005
6888196 Vertical MOSFET reduced in cell size and method of producing the same May. 3, 2005
6882009 Electrostatic discharge protection device and method of manufacturing the same Apr. 19, 2005
6879006 MOS transistor and method for fabricating the same Apr. 12, 2005
6878989 Power MOSFET semiconductor device and method of manufacturing the same Apr. 12, 2005
6878582 Low-GIDL MOSFET structure and method for fabrication Apr. 12, 2005
6878580 Semiconductor device having gate with negative slope and method for manufacturing the same Apr. 12, 2005
6875647 Method of manufacturing semiconductor devices to protect against a punchthrough phenomenon Apr. 5, 2005
6875666 Methods of manufacturing transistors and transistors having an anti-punchthrough region Apr. 5, 2005
6876035 High voltage N-LDMOS transistors having shallow trench isolation region Apr. 5, 2005
6869839 Method of fabricating a semiconductor device having an L-shaped spacer Mar. 22, 2005
6864145 Method of fabricating a robust gate dielectric using a replacement gate flow Mar. 8, 2005
6861689 One transistor DRAM cell structure and method for forming Mar. 1, 2005
6853020 Double-gate semiconductor device Feb. 8, 2005
6849890 Semiconductor device and manufacturing method thereof Feb. 1, 2005
6846708 Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device Jan. 25, 2005
6847089 Gate edge diode leakage reduction Jan. 25, 2005
6844585 Circuit and method of forming the circuit having subsurface conductors Jan. 18, 2005
6844247 Semiconductor device and method of manufacturing the same Jan. 18, 2005
6841826 Low-GIDL MOSFET structure and method for fabrication Jan. 11, 2005
6838329 High concentration indium fluorine retrograde wells Jan. 4, 2005
6835627 Method for forming a DMOS device and a DMOS device Dec. 28, 2004
6833307 Method for manufacturing a semiconductor component having an early halo implant Dec. 21, 2004
6830980 Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions Dec. 14, 2004
6828194 Low voltage programmable and erasable flash EEPROM Dec. 7, 2004
6828629 Semiconductor device and method of fabricating the same Dec. 7, 2004
6825543 Semiconductor device, method for manufacturing the same, and liquid jet apparatus Nov. 30, 2004
6821830 Method for fabricating a semiconductor device including using a hard mask or a silylated photoresist for an angled tilted ion implant Nov. 23, 2004
6821857 High on-current device for high performance embedded DRAM (eDRAM) and method of forming the same Nov. 23, 2004
6821834 Ion implantation methods and transistor cell layout for fin type transistors Nov. 23, 2004
6821824 Semiconductor device and method of manufacturing the same Nov. 23, 2004
6818946 Trench MOSFET with increased channel density Nov. 16, 2004
6818951 Arrangement in a power mosfet Nov. 16, 2004
6818493 Selective metal oxide removal performed in a reaction chamber in the absence of RF activation Nov. 16, 2004
6815301 Method for fabricating bipolar transistor Nov. 9, 2004

1 2 3 4 5 6 7 8 9 10 11 12 13 14

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