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Class Information
Number: 257/E21.345
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > Characterized by the angle between the ion beam and the crystal planes or the main crystal surface (epo)
Description: This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265F.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5043787 Extremely small area npn lateral transistor Aug. 27, 1991
5031014 Lateral transistor separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom Jul. 9, 1991
5027184 NPN type lateral transistor with minimal substrate operation interference Jun. 25, 1991
5025302 PNP type lateral transistor with minimal substrate operation interference Jun. 18, 1991
5013673 Implantation method for uniform trench sidewall doping by scanning velocity correction May. 7, 1991
4921812 Process of fabricating field effect transistor device May. 1, 1990
4918027 Method of fabricating semiconductor device Apr. 17, 1990
4877962 Ion implantation method Oct. 31, 1989
4864372 Field effect transistor Sep. 5, 1989
4800170 Process for forming in a silicon oxide layer a portion with vertical side walls Jan. 24, 1989
4771012 Method of making symmetrically controlled implanted regions using rotational angle of the substrate Sep. 13, 1988
4756793 Method of manufacturing a semiconductor device Jul. 12, 1988
4698899 Field effect transistor Oct. 13, 1987
4670968 Method of implanting uniform concentrations in solids having predetermined angular relationship with the ion-beam Jun. 9, 1987
4534824 Process for forming isolation slots having immunity to surface inversion Aug. 13, 1985
4532698 Method of making ultrashort FET using oblique angle metal deposition and ion implantation Aug. 6, 1985
4523369 Method for manufacturing a semiconductor device Jun. 18, 1985
4474623 Method of passivating a semiconductor body Oct. 2, 1984
4466178 Method of making extremely small area PNP lateral transistor by angled implant of deep trenches followed by refilling the same with dielectrics Aug. 21, 1984
4417385 Processes for manufacturing insulated-gate semiconductor devices with integral shorts Nov. 29, 1983
4415371 Method of making sub-micron dimensioned NPN lateral transistor Nov. 15, 1983
4232439 Masking technique usable in manufacturing semiconductor devices Nov. 11, 1980
4177084 Method for producing a low defect layer of silicon-on-sapphire wafer Dec. 4, 1979
4064495 Ion implanted archival memory media and methods for storage of data therein Dec. 20, 1977
4058413 Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer Nov. 15, 1977
3936861 Charge-coupled device and method of fabrication of the device Feb. 3, 1976

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