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Class Information
Number: 257/E21.343
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iii-v compound (epo) > Characterized by the implantation of both electrically active and inactive species in the same semiconductor region to be doped (epo)
Description: This subclass is indented under subclass E21.34. This subclass is substantially the same in scope as ECLA classification H01L21/265B3.










Patents under this class:

Patent Number Title Of Patent Date Issued
7980198 Doping apparatus, doping method, and method for fabricating thin film transistor Jul. 19, 2011
7923359 Reduction of sheet resistance of phosphorus implanted poly-silicon Apr. 12, 2011
7898062 Epitaxial semiconductor layer and method Mar. 1, 2011
7713761 Doping apparatus, doping method, and method for fabricating thin film transistor May. 11, 2010
7705429 Epitaxial semiconductor layer and method Apr. 27, 2010
7592243 Method of suppressing diffusion in a semiconductor device Sep. 22, 2009
7489019 Epitaxial semiconductor layer and method Feb. 10, 2009
7320921 Smart grading implant with diffusion retarding implant for making integrated circuit chips Jan. 22, 2008
7301221 Controlling diffusion in doped semiconductor regions Nov. 27, 2007
7297617 Method for controlling diffusion in semiconductor regions Nov. 20, 2007
7250312 Doping method and method for fabricating thin film transistor Jul. 31, 2007
7163878 Ultra-shallow arsenic junction formation in silicon germanium Jan. 16, 2007
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6138606 Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility Oct. 31, 2000
6109207 Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility Aug. 29, 2000
5866925 Gallium nitride junction field-effect transistor Feb. 2, 1999
5863831 Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility Jan. 26, 1999
5763319 Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility Jun. 9, 1998
5314833 Method of manufacturing GaAs metal semiconductor field effect transistor May. 24, 1994
5296394 Manufacturing method of GaAs metal semiconductor FET Mar. 22, 1994
5073507 Producing a plasma containing beryllium and beryllium fluoride Dec. 17, 1991
5053846 Semiconductor bipolar device with phosphorus doping Oct. 1, 1991
4960718 MESFET device having a semiconductor surface barrier layer Oct. 2, 1990
4956698 Group III-V compound semiconductor device having p-region formed by Be and Group V ions Sep. 11, 1990
4818721 Ion implantation into In-based group III-V compound semiconductors Apr. 4, 1989
4717685 Method for producing a metal semiconductor field effect transistor Jan. 5, 1988
4662060 Method of fabricating semiconductor device having low resistance non-alloyed contact layer May. 5, 1987
4489480 Method of manufacturing field effect transistors of GaAs by ion implantation Dec. 25, 1984
4469528 Method of manufacturing a semiconductor device of GaAs by two species ion implantation Sep. 4, 1984
4391651 Method of forming a hyperabrupt interface in a GaAs substrate Jul. 5, 1983
4385938 Dual species ion implantation into GaAs May. 31, 1983
4383869 Method for enhancing electron mobility in GaAs May. 17, 1983
4045252 Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer Aug. 30, 1977











 
 
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