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Class Information
Number: 257/E21.342
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iii-v compound (epo) > Of electrically active species (epo) > Through-implantation (epo)
Description: This subclass is indented under subclass E21.341. This subclass is substantially the same in scope as ECLA classification H01L21/265B2B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8329566 Method of manufacturing a high-performance semiconductor device Dec. 11, 2012
8093089 Methods of manufacturing image sensors including gettering regions Jan. 10, 2012
7351627 Method of manufacturing semiconductor device using gate-through ion implantation Apr. 1, 2008
7223663 MOS transistors and methods of manufacturing the same May. 29, 2007
7166503 Method of manufacturing a TFT with laser irradiation Jan. 23, 2007
6495407 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Dec. 17, 2002
5902130 Thermal processing of oxide-compound semiconductor structures May. 11, 1999
5384269 Methods for making and using a shallow semiconductor junction Jan. 24, 1995
5314833 Method of manufacturing GaAs metal semiconductor field effect transistor May. 24, 1994
5296394 Manufacturing method of GaAs metal semiconductor FET Mar. 22, 1994
5204278 Method of making MES field effect transistor using III-V compound semiconductor Apr. 20, 1993
4717685 Method for producing a metal semiconductor field effect transistor Jan. 5, 1988
4581076 Selectively implanting GaAs semiconductor substrates through a metallic layer Apr. 8, 1986
4519127 Method of manufacturing a MESFET by controlling implanted peak surface dopants May. 28, 1985
4505023 Method of making a planar INP insulated gate field transistor by a virtual self-aligned process Mar. 19, 1985
4494997 Ion implant mask and cap for gallium arsenide structures Jan. 22, 1985
4377030 Metallization of selectively implanted A.sub.III -B.sub.V compound semiconductors Mar. 22, 1983
4330343 Refractory passivated ion-implanted GaAs ohmic contacts May. 18, 1982
4263605 Ion-implanted, improved ohmic contacts for GaAs semiconductor devices Apr. 21, 1981
4173063 Fabrication of a semiconductor component element having a Schottky contact and little series resistance utilizing special masking in combination with ion implantation Nov. 6, 1979











 
 
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