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Class Information
Number: 257/E21.341
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iii-v compound (epo) > Of electrically active species (epo)
Description: This subclass is indented under subclass E21.34. This subclass is substantially the same in scope as ECLA classification H01L21/265B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.342 Through-implantation (epo) 20

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8461632 SiC semiconductor device and method of manufacturing the same Jun. 11, 2013
8105889 Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions Jan. 31, 2012
6214707 Method of forming a doped region in a semiconductor substrate Apr. 10, 2001
6153920 Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby Nov. 28, 2000
6103578 Method for forming high breakdown semiconductor device Aug. 15, 2000
6083781 Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance Jul. 4, 2000
6043139 Process for controlling dopant diffusion in a semiconductor layer Mar. 28, 2000
6040600 Trenched high breakdown voltage semiconductor device Mar. 21, 2000
6013566 Method of forming a doped region in a semiconductor substrate Jan. 11, 2000
5940695 Gallium antimonide complementary HFET Aug. 17, 1999
5899733 Method for the implantation of dopant May. 4, 1999
5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements Jun. 16, 1998
5731626 Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby Mar. 24, 1998
5672522 Method for making selective subcollector heterojunction bipolar transistors Sep. 30, 1997
5395794 Method of treating semiconductor materials Mar. 7, 1995
5384269 Methods for making and using a shallow semiconductor junction Jan. 24, 1995
5294557 Implanting impurities in semiconductors and semiconductor implanted with impurities Mar. 15, 1994
5256579 Tunable-frequency Gunn diodes fabrication with focused ion beams Oct. 26, 1993
5225367 Method for manufacturing an electronic device Jul. 6, 1993
5196370 Method of manufacturing an arsenic-including compound semiconductor device Mar. 23, 1993
5158897 Method for the production of a semiconductor device by implanting fluorocarbon ions Oct. 27, 1992
5139960 Interstitital doping in III-V semiconductors to avoid or suppress DX center formation Aug. 18, 1992
5113072 Device having superlattice structure, and method of and apparatus for manufacturing the same May. 12, 1992
5051376 Method for producing semiconductor device and semiconductor device produced thereby Sep. 24, 1991
4983540 Method of manufacturing devices having superlattice structures Jan. 8, 1991
4960718 MESFET device having a semiconductor surface barrier layer Oct. 2, 1990
4949144 Semiconductor photo-detector having a two-stepped impurity profile Aug. 14, 1990
4889817 Method of manufacturing schottky gate field transistor by ion implantation method Dec. 26, 1989
4871690 Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects Oct. 3, 1989
4795717 Method for producing semiconductor device Jan. 3, 1989
4745445 Interdigitated Schottky diode May. 17, 1988
4738934 Method of making indium phosphide devices Apr. 19, 1988
4717685 Method for producing a metal semiconductor field effect transistor Jan. 5, 1988
4716127 Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species Dec. 29, 1987
4696094 Process of manufactoring an indium antimonide photodiode Sep. 29, 1987
4679305 Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions Jul. 14, 1987
4673446 Method of forming thermally stable high resistivity regions in n-type indium phosphide by oxygen implantation Jun. 16, 1987
4670968 Method of implanting uniform concentrations in solids having predetermined angular relationship with the ion-beam Jun. 9, 1987
4668306 Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration May. 26, 1987
4636280 Method for the pretreatment of a substrate for ion implantation Jan. 13, 1987
4617724 Process for fabricating heterojunction bipolar transistor with low base resistance Oct. 21, 1986
4602965 Method of making FETs in GaAs by dual species implantation of silicon and boron Jul. 29, 1986
4595423 Method of homogenizing a compound semiconductor crystal prior to implantation Jun. 17, 1986
4559693 Process for fabricating field effect transistors Dec. 24, 1985
4546540 Self-aligned manufacture of FET Oct. 15, 1985
4521256 Method of making integrated devices having long and short minority carrier lifetimes Jun. 4, 1985
4519127 Method of manufacturing a MESFET by controlling implanted peak surface dopants May. 28, 1985
4505023 Method of making a planar INP insulated gate field transistor by a virtual self-aligned process Mar. 19, 1985
4494997 Ion implant mask and cap for gallium arsenide structures Jan. 22, 1985
4494995 Dual species ion implantation of ternary compounds based on In-Ga-As Jan. 22, 1985

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