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Class Information
Number: 257/E21.34
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iii-v compound (epo)
Description: This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.343 Characterized by the implantation of both electrically active and inactive species in the same semiconductor region to be doped (epo) 33
257/E21.341 Of electrically active species (epo) 66


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8586402 Method for the precision processing of substrates Nov. 19, 2013
8546247 Manufacturing method of semiconductor device with amorphous silicon layer formation Oct. 1, 2013
8211719 Method of processing substrate and method of manufacturing substrate for use in liquid ejection head Jul. 3, 2012
8207503 X-ray detector usable at microwave frequencies Jun. 26, 2012
7977224 Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby Jul. 12, 2011
7867880 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors Jan. 11, 2011
7842576 Semiconductor device including first and second sidewalls and method of manufacturing semiconductor device Nov. 30, 2010
7772595 Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Aug. 10, 2010
7056815 Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same Jun. 6, 2006
6495407 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Dec. 17, 2002
6335562 Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds Jan. 1, 2002
6235617 Semiconductor device and its manufacturing method May. 22, 2001
6111273 Semiconductor device and its manufacturing method Aug. 29, 2000
6037200 Compound semiconductor device and fabrication method Mar. 14, 2000
5907177 Semiconductor device having a tapered gate electrode May. 25, 1999
5766695 Method for reducing surface layer defects in semiconductor materials having a volatile species Jun. 16, 1998
5436499 High performance gaas devices and method Jul. 25, 1995
5399900 Isolation region in a group III-V semiconductor device and method of making the same Mar. 21, 1995
5396089 Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface Mar. 7, 1995
5338692 Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface Aug. 16, 1994
5332681 Method of making a semiconductor device by forming a nanochannel mask Jul. 26, 1994
5314833 Method of manufacturing GaAs metal semiconductor field effect transistor May. 24, 1994
5281543 Fabrication method for quantum devices in compound semiconductor layers Jan. 25, 1994
5272373 Internal gettering of oxygen in III-V compound semiconductors Dec. 21, 1993
5192709 Nanoscale modulation doping method Mar. 9, 1993
5183767 Method for internal gettering of oxygen in III-V compound semiconductors Feb. 2, 1993
5170226 Fabrication of quantum devices in compound semiconductor layers and resulting structures Dec. 8, 1992
5126277 Method of manufacturing a semiconductor device having a resistor Jun. 30, 1992
5059551 Process for neutralizing acceptor atoms in p-type InP Oct. 22, 1991
4960718 MESFET device having a semiconductor surface barrier layer Oct. 2, 1990
4952446 Ultra-thin semiconductor membranes Aug. 28, 1990
4851691 Method for photoresist pretreatment prior to charged particle beam processing Jul. 25, 1989
4731342 Method of manufacturing a memory cell for a dynamic type random access memory Mar. 15, 1988
4717685 Method for producing a metal semiconductor field effect transistor Jan. 5, 1988
4708883 Annealing process Nov. 24, 1987
4706377 Passivation of gallium arsenide by nitrogen implantation Nov. 17, 1987
H368 Field-effect transistor Nov. 3, 1987
4701422 Method of adjusting threshold voltage subsequent to fabrication of transistor Oct. 20, 1987
4679305 Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions Jul. 14, 1987
4673446 Method of forming thermally stable high resistivity regions in n-type indium phosphide by oxygen implantation Jun. 16, 1987
4646116 Semiconductor device having an electroluminescent diode Feb. 24, 1987
4642879 Method of making self-aligned FET using GaAs substrate and spatially controlled implanted channel region Feb. 17, 1987
4639275 Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor Jan. 27, 1987
H147 High resistivity group III-V compounds by helium bombardment Nov. 4, 1986
4602965 Method of making FETs in GaAs by dual species implantation of silicon and boron Jul. 29, 1986
4599791 Method of making integrated circuits employing proton-bombarded AlGaAs layers Jul. 15, 1986
4597165 Method of making integrated circuits employing ion-bombarded InP layers Jul. 1, 1986
4594603 Semiconductor device with disordered active region Jun. 10, 1986
4545824 Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion Oct. 8, 1985
4539743 Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment Sep. 10, 1985

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