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Class Information
Number: 257/E21.339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iv semiconductor (epo) > Of electrically inactive species in silicon to make buried insulating layer (epo)
Description: This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A4.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8680576 CMOS device and method of forming the same Mar. 25, 2014
8558332 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element Oct. 15, 2013
8551845 Structure and method for increasing strain in a device Oct. 8, 2013
8530343 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Sep. 10, 2013
8097529 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Jan. 17, 2012
7977200 Charge breakdown avoidance for MIM elements in SOI base technology and method Jul. 12, 2011
7919402 Cluster ion implantation for defect engineering Apr. 5, 2011
7875560 Semiconductor having optimized insulation structure and process for producing the semiconductor Jan. 25, 2011
7781302 Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions Aug. 24, 2010
7691734 Deep trench based far subcollector reachthrough Apr. 6, 2010
7666771 System and method for the manufacture of semiconductor devices by the implantation of carbon clusters Feb. 23, 2010
7608506 Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures Oct. 27, 2009
7560330 CMOS image sensor and method for manufacturing the same Jul. 14, 2009
7524744 Method of producing SOI wafer and SOI wafer Apr. 28, 2009
7358147 Process for producing SOI wafer Apr. 15, 2008
7041575 Localized strained semiconductor on insulator May. 9, 2006
7029991 Method for making a SOI semiconductor substrate with thin active semiconductor layer Apr. 18, 2006
7023051 Localized strained semiconductor on insulator Apr. 4, 2006
6987291 Integrated transistor circuitry Jan. 17, 2006
6967376 Divot reduction in SIMOX layers Nov. 22, 2005
6946696 Self-aligned isolation double-gate FET Sep. 20, 2005
6808967 Method for producing a buried layer of material in another material Oct. 26, 2004
6774017 Method and structures for dual depth oxygen layers in silicon-on-insulator processes Aug. 10, 2004
6767801 Simox substrate and method for production thereof Jul. 27, 2004
6767847 Method of forming a silicon nitride-silicon dioxide gate stack Jul. 27, 2004
6756257 Patterned SOI regions on semiconductor chips Jun. 29, 2004
6756639 Control of buried oxide quality in low dose SIMOX Jun. 29, 2004
6740913 MOS transistor using mechanical stress to control short channel effects May. 25, 2004
6737332 Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same May. 18, 2004
6680243 Shallow junction formation Jan. 20, 2004
6617034 SOI substrate and method for production thereof Sep. 9, 2003
6599789 Method of forming a field effect transistor Jul. 29, 2003
6558990 SOI substrate, method of manufacture thereof, and semiconductor device using SOI substrate May. 6, 2003
6548379 SOI substrate and method for manufacturing the same Apr. 15, 2003
6531410 Intrinsic dual gate oxide MOSFET using a damascene gate process Mar. 11, 2003
6492246 Method of forming a transistor in a semiconductor device Dec. 10, 2002
6486037 Control of buried oxide quality in low dose SIMOX Nov. 26, 2002
6475868 Oxygen implantation for reduction of junction capacitance in MOS transistors Nov. 5, 2002
6476445 Method and structures for dual depth oxygen layers in silicon-on-insulator processes Nov. 5, 2002
6465852 Silicon wafer including both bulk and SOI regions and method for forming same on a bulk silicon wafer Oct. 15, 2002
6465844 Power semiconductor device and method of manufacturing the same Oct. 15, 2002
6461933 SPIMOX/SIMOX combination with ITOX option Oct. 8, 2002
6444519 Method for forming a capacitor in a mixed mode circuit device by ion implantation Sep. 3, 2002
6440805 Method of forming a semiconductor device with isolation and well regions Aug. 27, 2002
6437404 Semiconductor-on-insulator transistor with recessed source and drain Aug. 20, 2002
6429099 Implementing contacts for bodies of semiconductor-on-insulator transistors Aug. 6, 2002
6429466 Integrated circuit substrate that accommodates lattice mismatch stress Aug. 6, 2002
6362051 Method of forming ONO flash memory devices using low energy nitrogen implantation Mar. 26, 2002
6362082 Methodology for control of short channel effects in MOS transistors Mar. 26, 2002
6333532 Patterned SOI regions in semiconductor chips Dec. 25, 2001

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