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Class Information
Number: 257/E21.338
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iv semiconductor (epo) > Recoil-implantation (epo)
Description: This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A3.










Patents under this class:

Patent Number Title Of Patent Date Issued
8497194 Methods of forming doped regions in semiconductor substrates Jul. 30, 2013
8329567 Methods of forming doped regions in semiconductor substrates Dec. 11, 2012
8237239 Schottky diode device and method for fabricating the same Aug. 7, 2012
7915128 High voltage semiconductor devices Mar. 29, 2011
7749783 Method of forming a display panel Jul. 6, 2010
7501333 Work function adjustment on fully silicided (FUSI) gate Mar. 10, 2009
6982229 Ion recoil implantation and enhanced carrier mobility in CMOS device Jan. 3, 2006
6720627 Semiconductor device having junction depths for reducing short channel effect Apr. 13, 2004
6683356 Semiconductor device with oxygen doped regions Jan. 27, 2004
6475815 Method of measuring temperature, method of taking samples for temperature measurement and method for fabricating semiconductor device Nov. 5, 2002
6337260 Use of knocked-on oxygen atoms for reduction of transient enhanced diffusion Jan. 8, 2002
6255702 Semiconductor device having junction depths for reducing short channel effect Jul. 3, 2001
6153538 Method of making MOSFET with ultra-thin gate oxide Nov. 28, 2000
6083780 Semiconductor device and method of fabrication thereof Jul. 4, 2000
5960319 Fabrication method for a semiconductor device Sep. 28, 1999
5744817 Hot carrier transistors and their manufacture Apr. 28, 1998
5672541 Ultra-shallow junction semiconductor device fabrication Sep. 30, 1997
5648673 Semiconductor device having metal silicide film on impurity diffused layer or conductive layer Jul. 15, 1997
5470794 Method for forming a silicide using ion beam mixing Nov. 28, 1995
4452644 Process for doping semiconductors Jun. 5, 1984
4368083 Process for doping semiconductors Jan. 11, 1983
4069068 Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions Jan. 17, 1978
4045248 Making Schottky barrier devices Aug. 30, 1977











 
 
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