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Class Information
Number: 257/E21.336
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iv semiconductor (epo) > Of electrically active species (epo)
Description: This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7592242 |
Apparatus and method for controlling diffusion |
Sep. 22, 2009 |
| 7488650 |
Method of forming trench-gate electrode for FinFET device |
Feb. 10, 2009 |
| 7435658 |
Method of manufacturing metal-oxide-semiconductor transistor |
Oct. 14, 2008 |
| 7371648 |
Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same |
May. 13, 2008 |
| 7364971 |
Method for manufacturing semiconductor device having super junction construction |
Apr. 29, 2008 |
| 7326622 |
Method of manufacturing semiconductor MOS transistor device |
Feb. 5, 2008 |
| 7282415 |
Method for making a semiconductor device with strain enhancement |
Oct. 16, 2007 |
| 7253054 |
One time programmable EPROM for advanced CMOS technology |
Aug. 7, 2007 |
| 7238577 |
Method of manufacturing self-aligned n and p type stripes for a superjunction device |
Jul. 3, 2007 |
| 7223663 |
MOS transistors and methods of manufacturing the same |
May. 29, 2007 |
| 7214577 |
Method of fabricating semiconductor integrated circuit device |
May. 8, 2007 |
| 7202102 |
Doped absorption for enhanced responsivity for high speed photodiodes |
Apr. 10, 2007 |
| 7192834 |
LDMOS device and method of fabrication of LDMOS device |
Mar. 20, 2007 |
| 7074270 |
Method for predicting the behavior of dopant and defect components |
Jul. 11, 2006 |
| 7074684 |
Elevated source drain disposable spacer CMOS |
Jul. 11, 2006 |
| 7071069 |
Shallow amorphizing implant for gettering of deep secondary end of range defects |
Jul. 4, 2006 |
| 7060572 |
MOSFET with short channel structure and formation method thereof |
Jun. 13, 2006 |
| 7060599 |
Method of forming shallow doped junctions having a variable profile gradation of dopants |
Jun. 13, 2006 |
| 7052981 |
Ion implantation method |
May. 30, 2006 |
| 7041549 |
Method for manufacturing semiconductor device |
May. 9, 2006 |
| 7030464 |
Semiconductor device and method of manufacturing the same |
Apr. 18, 2006 |
| 7026229 |
Athermal annealing with rapid thermal annealing system and method |
Apr. 11, 2006 |
| 7022577 |
Method of forming ultra shallow junctions |
Apr. 4, 2006 |
| 7018885 |
Method of manufacturing semiconductor devices |
Mar. 28, 2006 |
| 7005362 |
Method of fabricating a thin film transistor |
Feb. 28, 2006 |
| 7002166 |
Method and system for single ion implantation |
Feb. 21, 2006 |
| 6989302 |
Method for fabricating a p-type shallow junction using diatomic arsenic |
Jan. 24, 2006 |
| 6982212 |
Method of manufacturing a semiconductor device |
Jan. 3, 2006 |
| 6974750 |
Process for forming a trench power MOS device suitable for large diameter wafers |
Dec. 13, 2005 |
| 6960498 |
Doping method, doping apparatus, and control system for doping apparatus |
Nov. 1, 2005 |
| 6955991 |
Atmospheric process and system for controlled and rapid removal of polymers from high depth to width aspect ratio holes |
Oct. 18, 2005 |
| 6949467 |
Forming method of contact in semiconductor device and manufacturing method of PMOS device using the same |
Sep. 27, 2005 |
| 6946364 |
Integrated circuit having a device wafer with a diffused doped backside layer |
Sep. 20, 2005 |
| 6946337 |
Method of manufacturing semiconductor devices |
Sep. 20, 2005 |
| 6943085 |
Method of manufacturing metal-oxide-semiconductor transistor |
Sep. 13, 2005 |
| 6939769 |
Method for manufacturing a semiconductor device with using double implanting boron and boron difluoride |
Sep. 6, 2005 |
| 6936505 |
Method of forming a shallow junction |
Aug. 30, 2005 |
| 6933214 |
Method of manufacturing flash memories of semiconductor devices |
Aug. 23, 2005 |
| 6924216 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device |
Aug. 2, 2005 |
| 6921933 |
Semiconductor device and method of fabricating the same |
Jul. 26, 2005 |
| 6911706 |
Forming strained source drain junction field effect transistors |
Jun. 28, 2005 |
| 6897131 |
Advances in spike anneal processes for ultra shallow junctions |
May. 24, 2005 |
| 6897118 |
Method of multiple pulse laser annealing to activate ultra-shallow junctions |
May. 24, 2005 |
| 6885078 |
Circuit isolation utilizing MeV implantation |
Apr. 26, 2005 |
| 6881987 |
pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same |
Apr. 19, 2005 |
| 6878583 |
Integration method to enhance p+ gate activation |
Apr. 12, 2005 |
| 6878596 |
Method of forming high voltage junction in semiconductor device |
Apr. 12, 2005 |
| 6869848 |
Method of manufacturing flash memory device |
Mar. 22, 2005 |
| 6867495 |
Integrated circuit having a device wafer with a diffused doped backside layer |
Mar. 15, 2005 |
| 6864126 |
Methods of manufacturing semiconductor devices |
Mar. 8, 2005 |
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