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Class Information
Number: 257/E21.336
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ions for implantation (epo) > In group iv semiconductor (epo) > Of electrically active species (epo)
Description: This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.337 Through-implantation (epo) 439


Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8652954 Method for manufacturing silicon carbide semiconductor device Feb. 18, 2014
8557652 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Oct. 15, 2013
8492848 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Jul. 23, 2013
8476152 N-type carrier enhancement in semiconductors Jul. 2, 2013
8426276 Non-volatile semiconductor storage device and method of manufacturing the same Apr. 23, 2013
8421095 Light-emitting diode array Apr. 16, 2013
8343863 N-type carrier enhancement in semiconductors Jan. 1, 2013
8324088 Sputtering-less ultra-low energy ion implantation Dec. 4, 2012
8288222 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Oct. 16, 2012
8278171 Fabrication method for semiconductor device having laminated electronic conductor on bit line Oct. 2, 2012
8278196 High surface dopant concentration semiconductor device and method of fabricating Oct. 2, 2012
8247875 Fabrication method of semiconductor device Aug. 21, 2012
8187957 Field-effect transistor and method for fabricating the same May. 29, 2012
8163635 Manufacturing method of semiconductor device Apr. 24, 2012
8063453 Gate in semiconductor device and method of fabricating the same Nov. 22, 2011
8030166 Lateral pocket implant charge trapping devices Oct. 4, 2011
7999313 Semiconductor device having vertical pillar transistors and method for manufacturing the same Aug. 16, 2011
7968459 Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors Jun. 28, 2011
7968955 Gate in semiconductor device and method of fabricating the same Jun. 28, 2011
7964514 Multiple nitrogen plasma treatments for thin SiON dielectrics Jun. 21, 2011
7943982 Semiconductor device having laminated electronic conductor on bit line May. 17, 2011
7943468 Penetrating implant for forming a semiconductor device May. 17, 2011
7939418 Partial implantation method for semiconductor manufacturing May. 10, 2011
7808102 Multi-die DC-DC boost power converter with efficient packaging Oct. 5, 2010
7790535 Depletion-free MOS using atomic-layer doping Sep. 7, 2010
7791135 Insulated gate silicon carbide semiconductor device and method for manufacturing the same Sep. 7, 2010
7776725 Anti-halo compensation Aug. 17, 2010
7737012 Manufacturing method of a semiconductor device Jun. 15, 2010
7659187 Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface Feb. 9, 2010
7649230 Complementary field-effect transistors having enhanced performance with a single capping layer Jan. 19, 2010
7629666 Method and structure for implanting bonded substrates for electrical conductivity Dec. 8, 2009
7592242 Apparatus and method for controlling diffusion Sep. 22, 2009
7488650 Method of forming trench-gate electrode for FinFET device Feb. 10, 2009
7435658 Method of manufacturing metal-oxide-semiconductor transistor Oct. 14, 2008
7371648 Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same May. 13, 2008
7364971 Method for manufacturing semiconductor device having super junction construction Apr. 29, 2008
7326622 Method of manufacturing semiconductor MOS transistor device Feb. 5, 2008
7282415 Method for making a semiconductor device with strain enhancement Oct. 16, 2007
7253054 One time programmable EPROM for advanced CMOS technology Aug. 7, 2007
7238577 Method of manufacturing self-aligned n and p type stripes for a superjunction device Jul. 3, 2007
7223663 MOS transistors and methods of manufacturing the same May. 29, 2007
7214577 Method of fabricating semiconductor integrated circuit device May. 8, 2007
7202102 Doped absorption for enhanced responsivity for high speed photodiodes Apr. 10, 2007
7192834 LDMOS device and method of fabrication of LDMOS device Mar. 20, 2007
7074684 Elevated source drain disposable spacer CMOS Jul. 11, 2006
7074270 Method for predicting the behavior of dopant and defect components Jul. 11, 2006
7071069 Shallow amorphizing implant for gettering of deep secondary end of range defects Jul. 4, 2006
7060599 Method of forming shallow doped junctions having a variable profile gradation of dopants Jun. 13, 2006
7060572 MOSFET with short channel structure and formation method thereof Jun. 13, 2006
7052981 Ion implantation method May. 30, 2006

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