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Class Information
Number: 257/E21.331
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo)
Description: This subclass is indented under subclass E21.328. This subclass is substantially the same in scope as ECLA classification H01L21/263.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7410878 |
Polysilicon film having smooth surface and method of forming the same |
Aug. 12, 2008 |
| 7410907 |
Fabricating integrated devices using embedded masks |
Aug. 12, 2008 |
| 6943128 |
Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element |
Sep. 13, 2005 |
| 6825101 |
Methods for annealing a substrate and article produced by such methods |
Nov. 30, 2004 |
| 6774407 |
Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response |
Aug. 10, 2004 |
| 6469368 |
Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method |
Oct. 22, 2002 |
| 6465871 |
Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device |
Oct. 15, 2002 |
| 6429137 |
Solid state thermal switch |
Aug. 6, 2002 |
| 6355493 |
Method for forming IC's comprising a highly-resistive or semi-insulating semiconductor substrate having a thin, low resistance active semiconductor layer thereon |
Mar. 12, 2002 |
| 6326274 |
Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells |
Dec. 4, 2001 |
| 6252259 |
Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
Jun. 26, 2001 |
| 6214750 |
Alternative structure to SOI using proton beams |
Apr. 10, 2001 |
| 6136672 |
Process for device fabrication using a high-energy boron implant |
Oct. 24, 2000 |
| 6100575 |
Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
Aug. 8, 2000 |
| 6046109 |
Creation of local semi-insulating regions on semiconductor substrates |
Apr. 4, 2000 |
| 6034408 |
Solid state thermal switch |
Mar. 7, 2000 |
| 5750443 |
Method of manufacturing semiconductor device |
May. 12, 1998 |
| 5747872 |
Fast power diode |
May. 5, 1998 |
| 5510274 |
Method of controlling a carrier lifetime in a semiconductor switching device |
Apr. 23, 1996 |
| 5420045 |
Process for manufacturing thyristor with adjustable breakover voltage |
May. 30, 1995 |
| 5352330 |
Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption |
Oct. 4, 1994 |
| 5284780 |
Method for increasing the electric strength of a multi-layer semiconductor component |
Feb. 8, 1994 |
| 5248633 |
Methods for forming epitaxial self-aligned calcium silicide contacts and structures |
Sep. 28, 1993 |
| 5243205 |
Semiconductor device with overvoltage protective function |
Sep. 7, 1993 |
| 5219773 |
Method of making reoxidized nitrided oxide MOSFETs |
Jun. 15, 1993 |
| 5151766 |
Semiconductor component |
Sep. 29, 1992 |
| 5144402 |
Semiconductor switching device and method of controlling a carrier life time in a semiconductor switching device |
Sep. 1, 1992 |
| 5017508 |
Method of annealing fully-fabricated, radiation damaged semiconductor devices |
May. 21, 1991 |
| 4987087 |
Process for manufacturing a thyristor with proton irradiation |
Jan. 22, 1991 |
| 4806497 |
Method for producing large-area power semiconductor components |
Feb. 21, 1989 |
| 4792530 |
Process for balancing forward and reverse characteristic of thyristors |
Dec. 20, 1988 |
| 4762802 |
Method for preventing latchup in CMOS devices |
Aug. 9, 1988 |
| 4684413 |
Method for increasing the switching speed of a semiconductor device by neutron irradiation |
Aug. 4, 1987 |
| 4626315 |
Process of forming ultrafine pattern |
Dec. 2, 1986 |
| 4620211 |
Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices |
Oct. 28, 1986 |
| 4585489 |
Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer |
Apr. 29, 1986 |
| 4530734 |
Low energy ion etching |
Jul. 23, 1985 |
| 4526624 |
Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
Jul. 2, 1985 |
| 4521256 |
Method of making integrated devices having long and short minority carrier lifetimes |
Jun. 4, 1985 |
| 4497884 |
Method for the production of a self-supporting mask |
Feb. 5, 1985 |
| 4469527 |
Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing |
Sep. 4, 1984 |
| 4457972 |
Enhanced adhesion by high energy bombardment |
Jul. 3, 1984 |
| 4328610 |
Method of reducing alpha-particle induced errors in an integrated circuit |
May. 11, 1982 |
| 4318750 |
Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects |
Mar. 9, 1982 |
| 4311534 |
Reducing the reverse recovery charge of thyristors by nuclear irradiation |
Jan. 19, 1982 |
| 4292729 |
Electron-beam programmable semiconductor device structure |
Oct. 6, 1981 |
| 4292644 |
Control of valley current in a unijunction transistor by electron irradiation |
Sep. 29, 1981 |
| 4291329 |
Thyristor with continuous recombination center shunt across planar emitter-base junction |
Sep. 22, 1981 |
| 4281336 |
Thyristor element with short turn-off time and method for producing such element |
Jul. 28, 1981 |
| 4278475 |
Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
Jul. 14, 1981 |
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