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Class Information
Number: 257/E21.331
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo)
Description: This subclass is indented under subclass E21.328. This subclass is substantially the same in scope as ECLA classification H01L21/263.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.332 For etching, e.g., sputter etching (epo) 66
257/E21.333 For heating, e.g., electron beam heating (epo) 89
257/E21.334 Producing ions for implantation (epo) 186
257/E21.347 Using electromagnetic radiation, e.g., laser radiation (epo) 675


Patents under this class:
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Patent Number Title Of Patent Date Issued
8399342 Method for fabricating semiconductor device with buried bit lines Mar. 19, 2013
8288864 Microwave module Oct. 16, 2012
8216919 Method of manufacturing a semiconductor device and substrate carrier structure Jul. 10, 2012
8216922 Plasma doping method Jul. 10, 2012
8207068 Method of fabricating a resistance based memory device and the memory device Jun. 26, 2012
8138573 On-chip heater and methods for fabrication thereof and use thereof Mar. 20, 2012
8003498 Particle beam assisted modification of thin film materials Aug. 23, 2011
7910458 Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials Mar. 22, 2011
7879634 Process for producing a liquid crystal cell substrate having a TFT driver element, a liquid crystal cell substrate, and liquid crystal display device Feb. 1, 2011
7772595 Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Aug. 10, 2010
7727791 Semiconductor layer, process for forming the same, and semiconductor light emitting device Jun. 1, 2010
7719050 Low power electrically alterable nonvolatile memory cells and arrays May. 18, 2010
7615466 Method for producing a semiconductor-on-insulator structure Nov. 10, 2009
7579654 Semiconductor on insulator structure made using radiation annealing Aug. 25, 2009
7410907 Fabricating integrated devices using embedded masks Aug. 12, 2008
7410878 Polysilicon film having smooth surface and method of forming the same Aug. 12, 2008
6943128 Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element Sep. 13, 2005
6825101 Methods for annealing a substrate and article produced by such methods Nov. 30, 2004
6774407 Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response Aug. 10, 2004
6469368 Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method Oct. 22, 2002
6465871 Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device Oct. 15, 2002
6429137 Solid state thermal switch Aug. 6, 2002
6355493 Method for forming IC's comprising a highly-resistive or semi-insulating semiconductor substrate having a thin, low resistance active semiconductor layer thereon Mar. 12, 2002
6326274 Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells Dec. 4, 2001
6252259 Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device Jun. 26, 2001
6214750 Alternative structure to SOI using proton beams Apr. 10, 2001
6136672 Process for device fabrication using a high-energy boron implant Oct. 24, 2000
6100575 Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device Aug. 8, 2000
6046109 Creation of local semi-insulating regions on semiconductor substrates Apr. 4, 2000
6034408 Solid state thermal switch Mar. 7, 2000
5750443 Method of manufacturing semiconductor device May. 12, 1998
5747872 Fast power diode May. 5, 1998
5510274 Method of controlling a carrier lifetime in a semiconductor switching device Apr. 23, 1996
5420045 Process for manufacturing thyristor with adjustable breakover voltage May. 30, 1995
5352330 Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption Oct. 4, 1994
5284780 Method for increasing the electric strength of a multi-layer semiconductor component Feb. 8, 1994
5248633 Methods for forming epitaxial self-aligned calcium silicide contacts and structures Sep. 28, 1993
5243205 Semiconductor device with overvoltage protective function Sep. 7, 1993
5219773 Method of making reoxidized nitrided oxide MOSFETs Jun. 15, 1993
5151766 Semiconductor component Sep. 29, 1992
5144402 Semiconductor switching device and method of controlling a carrier life time in a semiconductor switching device Sep. 1, 1992
5017508 Method of annealing fully-fabricated, radiation damaged semiconductor devices May. 21, 1991
4987087 Process for manufacturing a thyristor with proton irradiation Jan. 22, 1991
4806497 Method for producing large-area power semiconductor components Feb. 21, 1989
4792530 Process for balancing forward and reverse characteristic of thyristors Dec. 20, 1988
4762802 Method for preventing latchup in CMOS devices Aug. 9, 1988
4684413 Method for increasing the switching speed of a semiconductor device by neutron irradiation Aug. 4, 1987
4626315 Process of forming ultrafine pattern Dec. 2, 1986
4620211 Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices Oct. 28, 1986
4585489 Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer Apr. 29, 1986

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