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Class Information
Number: 257/E21.33
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > To produce chemical element by transmutation (epo)
Description: This subclass is indented under subclass E21.328. This subclass is substantially the same in scope as ECLA classification H01L21/261.

Patents under this class:

Patent Number Title Of Patent Date Issued
8658500 Single crystal U-MOS gates using microwave crystal regrowth Feb. 25, 2014
7910419 SOI transistor with self-aligned ground plane and gate and buried oxide of variable thickness Mar. 22, 2011
6952019 Electron device which controls quantum chaos and quantum chaos controlling method Oct. 4, 2005
6946339 Method for creating a stepped structure on a substrate Sep. 20, 2005
6838729 Semiconductor component with enhanced avalanche ruggedness Jan. 4, 2005
6703292 Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Mar. 9, 2004
6646304 Universal semiconductor wafer for high-voltage semiconductor components Nov. 11, 2003
6359309 Power MOSFET and IGBT with optimized on-resistance and breakdown voltage Mar. 19, 2002
6346464 Manufacturing method of semiconductor device Feb. 12, 2002
6190970 Method of making power MOSFET and IGBT with optimized on-resistance and breakdown voltage Feb. 20, 2001
6162665 High voltage transistors and thyristors Dec. 19, 2000
6114225 Local penetrating proton beam transmutation doping method for silicon Sep. 5, 2000
6100168 Location selective transmutation doping on silicon wafers using high energy deuterons Aug. 8, 2000
6028329 Bipolar junction transistor device and a method of fabricating the same Feb. 22, 2000
5146296 Devices for detecting and/or imaging single photoelectron Sep. 8, 1992
5021854 Silicon avalanche photodiode array Jun. 4, 1991
4951104 Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor Aug. 21, 1990
4910156 Neutron transmutation doping of a silicon wafer Mar. 20, 1990
4836788 Production of solid-state image pick-up device with uniform distribution of dopants Jun. 6, 1989
4806497 Method for producing large-area power semiconductor components Feb. 21, 1989
4728371 Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation Mar. 1, 1988
4639276 Method of making thyristor with a high tolerable bias voltage Jan. 27, 1987
4479829 Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation Oct. 30, 1984
4348351 Method for producing neutron doped silicon having controlled dopant variation Sep. 7, 1982
4277307 Method of restoring Si crystal lattice order after neutron irradiation Jul. 7, 1981
4260448 Process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment Apr. 7, 1981
4135951 Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials Jan. 23, 1979
4129463 Polycrystalline silicon semiconducting material by nuclear transmutation doping Dec. 12, 1978
4042454 Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation Aug. 16, 1977
4027051 Method of producing homogeneously doped n-type Si monocrystals and adjusting dopant concentration therein by thermal neutron radiation May. 31, 1977
4025365 Method of producing homogeneously doped p-conductive semiconductor materials May. 24, 1977
3967982 Method of doping a semiconductor layer Jul. 6, 1976

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