| |
 |
|
Class Information
Number: 257/E21.326
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > Of diamond body (epo) > Of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.324. This subclass is substantially the same in scope as ECLA classification H01L21/324P.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7075111 |
Nitride semiconductor substrate and its production method |
Jul. 11, 2006 |
| 7045808 |
III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method |
May. 16, 2006 |
| 7041519 |
Method for producing p-type group III nitride compound semiconductor |
May. 9, 2006 |
| 6960482 |
Method of fabricating nitride semiconductor and method of fabricating semiconductor device |
Nov. 1, 2005 |
| 6861340 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
Mar. 1, 2005 |
| 6858866 |
III-nitride light emitting diode |
Feb. 22, 2005 |
| 6830995 |
Method of diffusing zinc into article and method of heating article |
Dec. 14, 2004 |
| 6797595 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
Sep. 28, 2004 |
| 6784074 |
Defect-free semiconductor templates for epitaxial growth and method of making same |
Aug. 31, 2004 |
| 6653166 |
Semiconductor device and method of making same |
Nov. 25, 2003 |
| 6562129 |
Formation method for semiconductor layer |
May. 13, 2003 |
| 6537838 |
Forming semiconductor structures including activated acceptors in buried p-type III-V layers |
Mar. 25, 2003 |
| 6524976 |
Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
Feb. 25, 2003 |
| 6495433 |
Method of activating compound semiconductor layer to p-type compound semiconductor layer |
Dec. 17, 2002 |
| 6479313 |
Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes |
Nov. 12, 2002 |
| 6447600 |
Method of removing defects of single crystal material and single crystal material from which defects are removed by the method |
Sep. 10, 2002 |
| 6432847 |
Method of activating P-type compound semiconductor by using lasers for reducing the resistivity thereof |
Aug. 13, 2002 |
| 6429102 |
Method of manufacturing low resistivity p-type compound semiconductor material |
Aug. 6, 2002 |
| 6380052 |
Method of activating P-type compound semiconductor for reducing the resistivity thereof |
Apr. 30, 2002 |
| 6294016 |
Method for manufacturing p-type GaN based thin film using nitridation |
Sep. 25, 2001 |
| 6242328 |
Method of activating compound semiconductor layer to p-type compound semiconductor layer |
Jun. 5, 2001 |
| 6214707 |
Method of forming a doped region in a semiconductor substrate |
Apr. 10, 2001 |
| 6211089 |
Method for fabricating GaN substrate |
Apr. 3, 2001 |
| 6207469 |
Method for manufacturing a semiconductor device |
Mar. 27, 2001 |
| 6013566 |
Method of forming a doped region in a semiconductor substrate |
Jan. 11, 2000 |
| 5874320 |
Method for forming P-type gallium nitride |
Feb. 23, 1999 |
| 5744375 |
Capped anneal |
Apr. 28, 1998 |
| 5682045 |
Method of fabricating semiconductor device and semiconductor device fabricated thereby |
Oct. 28, 1997 |
| 5659188 |
Capped anneal |
Aug. 19, 1997 |
| 5595917 |
Method for hydrogen treatment of field effect transistors for use in hermetically sealed packages |
Jan. 21, 1997 |
| 5571748 |
Methods for producing compound semiconductor devices |
Nov. 5, 1996 |
| 5561088 |
Heating method and manufacturing method for semiconductor device |
Oct. 1, 1996 |
| 5557141 |
Method of doping, semiconductor device, and method of fabricating semiconductor device |
Sep. 17, 1996 |
| 5494861 |
Method for heat-treating a compound semiconductor |
Feb. 27, 1996 |
| 5395794 |
Method of treating semiconductor materials |
Mar. 7, 1995 |
| 5391515 |
Capped anneal |
Feb. 21, 1995 |
| 5350709 |
Method of doping a group III-V compound semiconductor |
Sep. 27, 1994 |
| 5264397 |
Method for activating zinc in semiconductor devices |
Nov. 23, 1993 |
| 5248376 |
Process for thermal-etching treatment of compound semiconductor substrate used in molecular beam epitaxy and apparatus for performing same |
Sep. 28, 1993 |
| 5240670 |
Method of improving the mechanical properties of semiconductor materials |
Aug. 31, 1993 |
| 5238868 |
Bandgap tuning of semiconductor quantum well structures |
Aug. 24, 1993 |
| 5233209 |
Guard ring structure with graded Be implantation |
Aug. 3, 1993 |
| 5225368 |
Method of producing strained-layer semiconductor devices via subsurface-patterning |
Jul. 6, 1993 |
| 5219797 |
Method of treating a gallium arsenide surface and gallium arsenide surface so treated |
Jun. 15, 1993 |
| 5210052 |
Method for fabricating a semiconductor substrate |
May. 11, 1993 |
| 5208182 |
Dislocation density reduction in gallium arsenide on silicon heterostructures |
May. 4, 1993 |
| 5196370 |
Method of manufacturing an arsenic-including compound semiconductor device |
Mar. 23, 1993 |
| 5162242 |
Method for annealing compound semiconductor devices |
Nov. 10, 1992 |
| 5137847 |
Method of producing GaAs single crystal substrate using three stage annealing and interstage etching |
Aug. 11, 1992 |
| 5098867 |
Heat treatment for compound semiconductor wafer |
Mar. 24, 1992 |
|
|
|
