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Class Information
Number: 257/E21.326
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > Of diamond body (epo) > Of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.324. This subclass is substantially the same in scope as ECLA classification H01L21/324P.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8399367 Process for high-pressure nitrogen annealing of metal nitrides Mar. 19, 2013
8304791 Nitride-based semiconductor light emitting device and methods of manufacturing the same Nov. 6, 2012
7867915 Method for activating nitride surfaces for amine-reactive chemistry Jan. 11, 2011
7772023 Method of producing semiconductor optical device Aug. 10, 2010
7633091 Structure for an image TFT array for an indirect X-ray sensor Dec. 15, 2009
7618836 Method for manufacturing semiconductor optical device Nov. 17, 2009
7504345 Method for eliminating defects from semiconductor materials Mar. 17, 2009
7075111 Nitride semiconductor substrate and its production method Jul. 11, 2006
7045808 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method May. 16, 2006
7041519 Method for producing p-type group III nitride compound semiconductor May. 9, 2006
6960482 Method of fabricating nitride semiconductor and method of fabricating semiconductor device Nov. 1, 2005
6861340 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device Mar. 1, 2005
6858866 III-nitride light emitting diode Feb. 22, 2005
6830995 Method of diffusing zinc into article and method of heating article Dec. 14, 2004
6797595 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device Sep. 28, 2004
6784074 Defect-free semiconductor templates for epitaxial growth and method of making same Aug. 31, 2004
6653166 Semiconductor device and method of making same Nov. 25, 2003
6562129 Formation method for semiconductor layer May. 13, 2003
6537838 Forming semiconductor structures including activated acceptors in buried p-type III-V layers Mar. 25, 2003
6524976 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device Feb. 25, 2003
6495433 Method of activating compound semiconductor layer to p-type compound semiconductor layer Dec. 17, 2002
6479313 Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes Nov. 12, 2002
6447600 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method Sep. 10, 2002
6432847 Method of activating P-type compound semiconductor by using lasers for reducing the resistivity thereof Aug. 13, 2002
6429102 Method of manufacturing low resistivity p-type compound semiconductor material Aug. 6, 2002
6380052 Method of activating P-type compound semiconductor for reducing the resistivity thereof Apr. 30, 2002
6294016 Method for manufacturing p-type GaN based thin film using nitridation Sep. 25, 2001
6242328 Method of activating compound semiconductor layer to p-type compound semiconductor layer Jun. 5, 2001
6214707 Method of forming a doped region in a semiconductor substrate Apr. 10, 2001
6211089 Method for fabricating GaN substrate Apr. 3, 2001
6207469 Method for manufacturing a semiconductor device Mar. 27, 2001
6013566 Method of forming a doped region in a semiconductor substrate Jan. 11, 2000
5874320 Method for forming P-type gallium nitride Feb. 23, 1999
5744375 Capped anneal Apr. 28, 1998
5682045 Method of fabricating semiconductor device and semiconductor device fabricated thereby Oct. 28, 1997
5659188 Capped anneal Aug. 19, 1997
5595917 Method for hydrogen treatment of field effect transistors for use in hermetically sealed packages Jan. 21, 1997
5571748 Methods for producing compound semiconductor devices Nov. 5, 1996
5561088 Heating method and manufacturing method for semiconductor device Oct. 1, 1996
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5494861 Method for heat-treating a compound semiconductor Feb. 27, 1996
5395794 Method of treating semiconductor materials Mar. 7, 1995
5391515 Capped anneal Feb. 21, 1995
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994
5264397 Method for activating zinc in semiconductor devices Nov. 23, 1993
5248376 Process for thermal-etching treatment of compound semiconductor substrate used in molecular beam epitaxy and apparatus for performing same Sep. 28, 1993
5240670 Method of improving the mechanical properties of semiconductor materials Aug. 31, 1993
5238868 Bandgap tuning of semiconductor quantum well structures Aug. 24, 1993
5233209 Guard ring structure with graded Be implantation Aug. 3, 1993
5225368 Method of producing strained-layer semiconductor devices via subsurface-patterning Jul. 6, 1993

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