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Class Information
Number: 257/E21.323
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > Of diamond body (epo)
Description: This subclass is indented under subclass E21.317. This subclass is substantially the same in scope as ECLA classification H01L21/322D.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.325 For the formation of pn junction without ad dition of impurities (epo) 12
257/E21.326 Of group iii-v compound (epo) 124
257/E21.324 Thermal treatment for modifying the properties of semiconductor body, e.g., annealing, sintering (epo) 533


Patents under this class:

Patent Number Title Of Patent Date Issued
8519496 Spin-transfer torque magnetic random access memory with multi-layered storage layer Aug. 27, 2013
8492860 Magnetic random access memory with switching assist layer Jul. 23, 2013
8338295 Method of fabricating metal interconnection and method of fabricating image sensor using the same Dec. 25, 2012
8158455 Boron-doped diamond semiconductor Apr. 17, 2012
7768091 Diamond ultraviolet sensor Aug. 3, 2010
7557378 Boron aluminum nitride diamond heterostructure Jul. 7, 2009
7002194 Via AP switching Feb. 21, 2006











 
 
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