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Class Information
Number: 257/E21.322
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To modify their internal properties, e.g., to produce internal imperfections (epo) > Of group iii-v compound, e.g., to make them semi-insulating (epo)
Description: This subclass is indented under subclass E21.317. This subclass is substantially the same in scope as ECLA classification H01L21/322C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8294182 Light emitting device Oct. 23, 2012
6943128 Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element Sep. 13, 2005
6620709 Fabrication of semiconductor materials and devices with controlled electrical conductivity Sep. 16, 2003
6524882 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same Feb. 25, 2003
6498111 Fabrication of semiconductor materials and devices with controlled electrical conductivity Dec. 24, 2002
6447600 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method Sep. 10, 2002
6406931 Structural tuning of residual conductivity in highly mismatched III-V layers Jun. 18, 2002
6335562 Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds Jan. 1, 2002
5766695 Method for reducing surface layer defects in semiconductor materials having a volatile species Jun. 16, 1998
5436499 High performance gaas devices and method Jul. 25, 1995
5426068 Method of manufacturing compound semiconductor wafer Jun. 20, 1995
5374589 Process of making a bistable photoconductive component Dec. 20, 1994
5272373 Internal gettering of oxygen in III-V compound semiconductors Dec. 21, 1993
5194395 Method of producing a substrate having semiconductor-on-insulator structure with gettering sites Mar. 16, 1993
5183767 Method for internal gettering of oxygen in III-V compound semiconductors Feb. 2, 1993
5063113 Substrate having semiconductor-on-insulator structure with gettering sites and production method thereof Nov. 5, 1991
4525239 Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits Jun. 25, 1985











 
 
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