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Class Information
Number: 257/E21.321
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To modify their internal properties, e.g., to produce internal imperfections (epo) > Of silicon body, e.g., for gettering (epo) > Thermally inducing defects using oxygen present in silicon body for intrinsic gettering (epo)
Description: This subclass is indented under subclass E21.318. This subclass is substantially the same in scope as ECLA classification H01L21/322B8.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7621996 |
Silicon wafer and method for producing same |
Nov. 24, 2009 |
| 7585683 |
Methods of fabricating ferroelectric devices |
Sep. 8, 2009 |
| 7538008 |
Method for producing a layer structure |
May. 26, 2009 |
| 7507640 |
Method for producing silicon wafer |
Mar. 24, 2009 |
| 7485929 |
Semiconductor-on-insulator (SOI) strained active areas |
Feb. 3, 2009 |
| 7485928 |
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
Feb. 3, 2009 |
| 7422634 |
Three inch silicon carbide wafer with low warp, bow, and TTV |
Sep. 9, 2008 |
| 7410877 |
Method for manufacturing SIMOX wafer and SIMOX wafer |
Aug. 12, 2008 |
| 7397063 |
Semiconductor device |
Jul. 8, 2008 |
| 7368823 |
Semiconductor device and method of manufacturing the same |
May. 6, 2008 |
| 7326658 |
Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer |
Feb. 5, 2008 |
| 7242075 |
Silicon wafers and method of fabricating the same |
Jul. 10, 2007 |
| 7071079 |
Epitaxial wafer and a method for producing it |
Jul. 4, 2006 |
| 7033962 |
Methods for manufacturing silicon wafer and silicone epitaxial wafer, and silicon epitaxial wafer |
Apr. 25, 2006 |
| 7011717 |
Method for heat treatment of silicon wafers and silicon wafer |
Mar. 14, 2006 |
| 6958092 |
Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof |
Oct. 25, 2005 |
| 6896728 |
Process for producing low defect density, ideal oxygen precipitating silicon |
May. 24, 2005 |
| 6897084 |
Control of oxygen precipitate formation in high resistivity CZ silicon |
May. 24, 2005 |
| 6893944 |
Method of manufacturing a semiconductor wafer |
May. 17, 2005 |
| 6878645 |
Method for manufacturing silicon wafer |
Apr. 12, 2005 |
| 6858094 |
Silicon wafer and silicon epitaxial wafer and production methods therefor |
Feb. 22, 2005 |
| 6849119 |
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
Feb. 1, 2005 |
| 6849901 |
Device layer of a silicon-on-insulator structure having vacancy dominated and substantially free of agglomerated vacancy-type defects |
Feb. 1, 2005 |
| 6843847 |
Silicon single crystal wafer and production method thereof and soi wafer |
Jan. 18, 2005 |
| 6840997 |
Vacancy, dominsated, defect-free silicon |
Jan. 11, 2005 |
| 6833195 |
Low temperature germanium transfer |
Dec. 21, 2004 |
| 6821344 |
Czochralski pullers including heat shield housings having sloping top and bottom |
Nov. 23, 2004 |
| 6818197 |
Epitaxial wafer |
Nov. 16, 2004 |
| 6809015 |
Method for heat treatment of silicon wafers and silicon wafer |
Oct. 26, 2004 |
| 6809011 |
Adjusting of defect profiles in crystal or crystalline-like structures |
Oct. 26, 2004 |
| 6808781 |
Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same |
Oct. 26, 2004 |
| 6805742 |
Silicon semiconductor substrate and process for producing the same |
Oct. 19, 2004 |
| 6805743 |
Method for manufacturing single-crystal-silicon wafers |
Oct. 19, 2004 |
| 6803331 |
Process for the heat treatment of a silicon wafer, and silicon wafer produced |
Oct. 12, 2004 |
| 6803242 |
Evaluation method of IG effectivity in semiconductor silicon substrates |
Oct. 12, 2004 |
| 6780238 |
Argon/ammonia rapid thermal annealing for silicon wafers |
Aug. 24, 2004 |
| 6743289 |
Thermal annealing process for producing low defect density single crystal silicon |
Jun. 1, 2004 |
| 6713370 |
Process for the preparation of an ideal oxygen precipitating silicon wafer capable of forming an enhanced denuded zone |
Mar. 30, 2004 |
| 6709511 |
Process for suppressing oxygen precipitation in vacancy dominated silicon |
Mar. 23, 2004 |
| 6686260 |
Process for producing thermally annealed wafers having improved internal gettering |
Feb. 3, 2004 |
| 6676753 |
Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions |
Jan. 13, 2004 |
| 6670261 |
Production method for annealed wafer |
Dec. 30, 2003 |
| 6666915 |
Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
Dec. 23, 2003 |
| 6645834 |
Method for manufacturing annealed wafer and annealed wafer |
Nov. 11, 2003 |
| 6638357 |
Method for revealing agglomerated intrinsic point defects in semiconductor crystals |
Oct. 28, 2003 |
| 6632278 |
Low defect density epitaxial wafer and a process for the preparation thereof |
Oct. 14, 2003 |
| 6605150 |
Low defect density regions of self-interstitial dominated silicon |
Aug. 12, 2003 |
| 6599815 |
Method and apparatus for forming a silicon wafer with a denuded zone |
Jul. 29, 2003 |
| 6599816 |
Method of manufacturing silicon epitaxial wafer |
Jul. 29, 2003 |
| 6586068 |
Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof |
Jul. 1, 2003 |
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