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Class Information
Number: 257/E21.309
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo) > By chemical means only (epo) > By liquid etching only (epo)
Description: This subclass is indented under subclass E21.308. This subclass is substantially the same in scope as ECLA classification H01L21/3213C2.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
5981454 Post clean treatment composition comprising an organic acid and hydroxylamine Nov. 9, 1999
5976767 Ammonium hydroxide etch of photoresist masked silicon Nov. 2, 1999
5970360 DRAM cell with a roughened poly-Si electrode Oct. 19, 1999
5968850 Wiring using chromium nitride and methods of fabrication therefor, liquid crystal display panels using the same wiring and methods of fabrication therefor Oct. 19, 1999
5942449 Method for removing an upper layer of material from a semiconductor wafer Aug. 24, 1999
5939334 System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides Aug. 17, 1999
5933757 Etch process selective to cobalt silicide for formation of integrated circuit structures Aug. 3, 1999
5928969 Method for controlled selective polysilicon etching Jul. 27, 1999
5914052 Wet etch method and apparatus Jun. 22, 1999
5911835 Method of removing etching residue Jun. 15, 1999
5904560 Cleaning step which improves electromigration performance of interlayer connection in integrated circuits May. 18, 1999
5897379 Low temperature system and method for CVD copper removal Apr. 27, 1999
5874358 Via hole profile and method of fabrication Feb. 23, 1999
5872055 Method for fabricating polysilicon conducting wires Feb. 16, 1999
5830786 Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring Nov. 3, 1998
5800726 Selective chemical etching in microelectronics fabrication Sep. 1, 1998
5759437 Etching of Ti-W for C4 rework Jun. 2, 1998
5714407 Etching agent, electronic device and method of manufacturing the device Feb. 3, 1998
5696035 Etchant, etching method, and method of fabricating semiconductor device Dec. 9, 1997
5668053 Method for fabricating multilayer semiconductor device Sep. 16, 1997
5633522 CMOS transistor with two-layer inverse-T tungsten gate May. 27, 1997
5619071 Anchored via connection Apr. 8, 1997
5607543 Integrated circuit etching Mar. 4, 1997
5599725 Method for fabricating a MOS transistor with two-layer inverse-T tungsten gate structure Feb. 4, 1997
5580800 Method of patterning aluminum containing group IIIb Element Dec. 3, 1996
5559049 Method of manufacturing a semiconductor device Sep. 24, 1996
5547896 Direct etch for thin film resistor using a hard mask Aug. 20, 1996
5518131 Etching molydbenum with ferric sulfate and ferric ammonium sulfate May. 21, 1996
5518966 Method for wet etching polysilicon May. 21, 1996
5486234 Removal of field and embedded metal by spin spray etching Jan. 23, 1996
5470790 Via hole profile and method of fabrication Nov. 28, 1995
5460687 Anisotropic liquid phase photochemical etch Oct. 24, 1995
5445986 Method of forming a roughened surface capacitor with two etching steps Aug. 29, 1995
5420063 Method of producing a resistor in an integrated circuit May. 30, 1995
5409569 Etchant, detergent and device/apparatus manufacturing method Apr. 25, 1995
5405801 Method for manufacturing a capacitor of a semiconductor device Apr. 11, 1995
5397742 Method for forming tungsten plug for metal wiring Mar. 14, 1995
5376231 Substrate for recording head, recording head and method for producing same Dec. 27, 1994
5376236 Process for etching titanium at a controllable rate Dec. 27, 1994
5358892 Etch stop useful in avoiding substrate pitting with poly buffered locos Oct. 25, 1994
5310457 Method of integrated circuit fabrication including selective etching of silicon and silicon compounds May. 10, 1994
5298117 Etching of copper-containing devices Mar. 29, 1994
5279702 Anisotropic liquid phase photochemical copper etch Jan. 18, 1994
5258093 Procss for fabricating a ferroelectric capacitor in a semiconductor device Nov. 2, 1993
5256597 Self-aligned conducting etch stop for interconnect patterning Oct. 26, 1993
5242543 Wet etching method for forming metal film pattern having tapered edges Sep. 7, 1993
5240879 Method of manufacturing a semiconductor device having conductive material provided in an insulating layer Aug. 31, 1993
5225376 Polysilicon taper process using spin-on glass Jul. 6, 1993
5223081 Method for roughening a silicon or polysilicon surface for a semiconductor substrate Jun. 29, 1993
5221856 Bipolar transistor with floating guard region under extrinsic base Jun. 22, 1993

1 2 3 4 5 6 7 8 9 10 11

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