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Class Information
Number: 257/E21.309
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo) > By chemical means only (epo) > By liquid etching only (epo)
Description: This subclass is indented under subclass E21.308. This subclass is substantially the same in scope as ECLA classification H01L21/3213C2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6277743 Method of fabricating self-aligned silicide Aug. 21, 2001
6276372 Process using hydroxylamine-gallic acid composition Aug. 21, 2001
6274499 Method to avoid copper contamination during copper etching and CMP Aug. 14, 2001
6267122 Semiconductor cleaning solution and method Jul. 31, 2001
6264752 Reactor for processing a microelectronic workpiece Jul. 24, 2001
6261964 Material removal method for forming a structure Jul. 17, 2001
6258691 Cylindrical capacitor and method for fabricating same Jul. 10, 2001
6255188 Method of removing a polysilicon buffer using an etching selectivity solution Jul. 3, 2001
6245191 Wet etch apparatus Jun. 12, 2001
6235641 Method and system to control the concentration of dissolved gas in a liquid May. 22, 2001
6221818 Hydroxylamine-gallic compound composition and process Apr. 24, 2001
6217667 Method for cleaning copper surfaces Apr. 17, 2001
6207465 Method of fabricating ferroelectric integrated circuit using dry and wet etching Mar. 27, 2001
6200947 Metal-corrosion inhibitor and cleaning liquid Mar. 13, 2001
6200910 Selective titanium nitride strip Mar. 13, 2001
6194365 Composition for cleaning and etching electronic display and substrate Feb. 27, 2001
6190951 Method for manufacturing a liquid crystal display apparatus Feb. 20, 2001
6187730 Hydroxylamine-gallic compound composition and process Feb. 13, 2001
6171959 Method for making a semiconductor device Jan. 9, 2001
6165911 Method of patterning a metal layer Dec. 26, 2000
6162738 Cleaning compositions for high dielectric structures and methods of using same Dec. 19, 2000
6162671 Method of forming capacitors having high dielectric constant material Dec. 19, 2000
6156661 Post clean treatment Dec. 5, 2000
6150279 Reverse current gold etch Nov. 21, 2000
6147002 Process for removing contaminant from a surface and composition useful therefor Nov. 14, 2000
6143611 Semiconductor processing methods, methods of forming electronic components, and transistors Nov. 7, 2000
6143126 Process and manufacturing tool architecture for use in the manufacture of one or more metallization levels on an integrated circuit Nov. 7, 2000
6143192 Ruthenium and ruthenium dioxide removal method and material Nov. 7, 2000
6136717 Method for producing a via hole to a doped region Oct. 24, 2000
6130170 Process improvements for titanium-tungsten etching in the presence of electroplated C4's Oct. 10, 2000
6130443 Liquid crystal display having wires made of molybdenum-tungsten alloy and a method of manufacturing the same Oct. 10, 2000
6127279 Solution applying method Oct. 3, 2000
6123865 Method for improving etch uniformity during a wet etching process Sep. 26, 2000
6120641 Process architecture and manufacturing tool sets employing hard mask patterning for use in the manufacture of one or more metallization levels on a workpiece Sep. 19, 2000
6121217 Alkanolamine semiconductor process residue removal composition and process Sep. 19, 2000
6117761 Self-aligned silicide strap connection of polysilicon layers Sep. 12, 2000
6110881 Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials Aug. 29, 2000
6107156 Silicide layer forming method and semiconductor integrated circuit Aug. 22, 2000
6103636 Method and apparatus for selective removal of material from wafer alignment marks Aug. 15, 2000
6100185 Semiconductor processing method of forming a high purity <200> grain orientation tin layer and semiconductor processing method of forming a conductive interconnect line Aug. 8, 2000
6074960 Method and composition for selectively etching against cobalt silicide Jun. 13, 2000
6071808 Method of passivating copper interconnects in a semiconductor Jun. 6, 2000
6066529 Method for enlarging surface area of a plurality of hemi-spherical grains on the surface of a semiconductor chip May. 23, 2000
6040629 Semiconductor integrated circuit having silicided elements of short length Mar. 21, 2000
6027571 Surface treatment for micromachining Feb. 22, 2000
6025267 Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices Feb. 15, 2000
6020639 Semiconductor wafer with removed CVD copper Feb. 1, 2000
6004869 Method for making a low resistivity electrode having a near noble metal Dec. 21, 1999
6001726 Method for using a conductive tungsten nitride etch stop layer to form conductive interconnects and tungsten nitride contact structure Dec. 14, 1999
5980643 Alkaline water-based solution for cleaning metallized microelectronic Nov. 9, 1999

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