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Class Information
Number: 257/E21.309
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo) > By chemical means only (epo) > By liquid etching only (epo)
Description: This subclass is indented under subclass E21.308. This subclass is substantially the same in scope as ECLA classification H01L21/3213C2.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
6413878 Method of manufacturing electronic components Jul. 2, 2002
6410442 Mask-less differential etching and planarization of copper films Jun. 25, 2002
6409930 Lamination of circuit sub-elements while assuring registration Jun. 25, 2002
6402592 Electrochemical methods for polishing copper films on semiconductor substrates Jun. 11, 2002
6399492 Ruthenium silicide processing methods Jun. 4, 2002
6399551 Alkanolamine semiconductor process residue removal process Jun. 4, 2002
6394114 Method for stripping copper in damascene interconnects May. 28, 2002
6395152 Methods and apparatus for electropolishing metal interconnections on semiconductor devices May. 28, 2002
6383917 Method for making integrated circuits May. 7, 2002
6376364 Method of fabricating semiconductor device Apr. 23, 2002
6376353 Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects Apr. 23, 2002
6376374 Process and manufacturing tool architecture for use in the manufacturing of one or more protected metallization structures on a workpiece Apr. 23, 2002
6372081 Process to prevent copper contamination of semiconductor fabs Apr. 16, 2002
6367486 Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal process Apr. 9, 2002
6365057 Circuit manufacturing using etched tri-metal media Apr. 2, 2002
6361712 Composition for selective etching of oxides over metals Mar. 26, 2002
6361708 Method and apparatus for polishing a metal film Mar. 26, 2002
6361611 Solution for cleaning metallized microelectronic workpieces and methods of using same Mar. 26, 2002
6358847 Method for enabling conventional wire bonding to copper-based bond pad features Mar. 19, 2002
6358855 Clean method for recessed conductive barriers Mar. 19, 2002
6358788 Method of fabricating a wordline in a memory array of a semiconductor device Mar. 19, 2002
6352867 Method of controlling feature dimensions based upon etch chemistry concentrations Mar. 5, 2002
6350319 Micro-environment reactor for processing a workpiece Feb. 26, 2002
6348159 Method and apparatus for etching coated substrates Feb. 19, 2002
6348289 System and method for controlling polysilicon feature critical dimension during processing Feb. 19, 2002
6335294 Wet cleans for cobalt disilicide processing Jan. 1, 2002
6335290 Etching method, thin film transistor matrix substrate, and its manufacture Jan. 1, 2002
6332988 Rework process Dec. 25, 2001
6331490 Process for etching thin-film layers of a workpiece used to form microelectric circuits or components Dec. 18, 2001
6331478 Methods for manufacturing semiconductor devices having chamfered metal silicide layers Dec. 18, 2001
6329299 Compositions and methods for the selective etching of tantalum-containing films for wafer reclamation Dec. 11, 2001
6329300 Method for manufacturing conductive pattern layer by two-step wet etching process Dec. 11, 2001
6329301 Method and apparatus for selective removal of material from wafer alignment marks Dec. 11, 2001
6329289 Method and apparatus for forming copper wiring Dec. 11, 2001
6322954 Wet inorganic ammonia etch of organically masked silicon-containing material Nov. 27, 2001
6319846 Method for removing solder bodies from a semiconductor wafer Nov. 20, 2001
6318385 Micro-environment chamber and system for rinsing and drying a semiconductor workpiece Nov. 20, 2001
6316350 Post fuse slag etch Nov. 13, 2001
6316370 Method for etching doped polysilicon with high selectivity to undoped polysilicon Nov. 13, 2001
6315883 Electroplanarization of large and small damascene features using diffusion barriers and electropolishing Nov. 13, 2001
6312527 Non-corrosive cleaning method for use in the manufacture of microelectronic device Nov. 6, 2001
6309975 Methods of making implanted structures Oct. 30, 2001
6309981 Edge bevel removal of copper from silicon wafers Oct. 30, 2001
6306775 Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG Oct. 23, 2001
6297136 Method for fabricating an embedded semiconductor device Oct. 2, 2001
6290865 Spin-rinse-drying process for electroplated semiconductor wafers Sep. 18, 2001
6284721 Cleaning and etching compositions Sep. 4, 2001
6279585 Etching method and method for manufacturing semiconductor device using the same Aug. 28, 2001
6281589 System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides Aug. 28, 2001
6277738 Method of manufacturing a semiconductor device capable of reducing contact resistance Aug. 21, 2001

1 2 3 4 5 6 7 8 9 10 11

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