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Class Information
Number: 257/E21.308
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo) > By chemical means only (epo)
Description: This subclass is indented under subclass E21.305. This subclass is substantially the same in scope as ECLA classification H01L21/3213C.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.309 By liquid etching only (epo) 524
257/E21.31 By vapor etching only (epo) 126


Patents under this class:

Patent Number Title Of Patent Date Issued
8390135 Semiconductor device Mar. 5, 2013
8143145 Method and arrangement for producing an N-semiconductive indium sulfide thin layer Mar. 27, 2012
7939437 Metallization method for solar cells May. 10, 2011
7413961 Method of fabricating a transistor structure Aug. 19, 2008
6666986 Supercritical etching compositions and method of using same Dec. 23, 2003
6149828 Supercritical etching compositions and method of using same Nov. 21, 2000
5960305 Method to improve uniformity/planarity on the edge die and also remove the tungsten stringers from wafer chemi-mechanical polishing Sep. 28, 1999
5918147 Process for forming a semiconductor device with an antireflective layer Jun. 29, 1999
5656533 Method of preventing polysilicon stringers during formation of a stacked double polysilicon structure by using dielectric sidewall spacers Aug. 12, 1997
5472562 Method of etching silicon nitride Dec. 5, 1995
5470790 Via hole profile and method of fabrication Nov. 28, 1995
5462891 Process for manufacturing a semiconductor device using NH.sub.4 OH-H.sub.2 O.sub.2 based etchant for Ti based thin film Oct. 31, 1995
5141897 Method of making integrated circuit interconnection Aug. 25, 1992











 
 
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