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Class Information
Number: 257/E21.307
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo) > By physical means only (epo) > Of silicon-containing layer (epo)
Description: This subclass is indented under subclass E21.306. This subclass is substantially the same in scope as ECLA classification H01L21/3213B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8563382 Semiconductor device Oct. 22, 2013
8187969 Method for manufacturing semiconductor device May. 29, 2012
8071480 Method and apparatuses for removing polysilicon from semiconductor workpieces Dec. 6, 2011
7754612 Methods and apparatuses for removing polysilicon from semiconductor workpieces Jul. 13, 2010
7585752 Process for deposition of semiconductor films Sep. 8, 2009
6436760 Method for reducing surface oxide in polysilicon processing Aug. 20, 2002
6207465 Method of fabricating ferroelectric integrated circuit using dry and wet etching Mar. 27, 2001
4496418 Process for forming an improved silicon-on-sapphire device Jan. 29, 1985
4312680 Method of manufacturing submicron channel transistors Jan. 26, 1982
4293375 Method of manufacturing a device and device manufactured according to the method Oct. 6, 1981
4162210 Method for covering a first layer or layer sequence situated on a substrate with an additional second layer by a sputtering-on process Jul. 24, 1979
4124934 Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconduc Nov. 14, 1978
4123564 Method of producing semiconductor device Oct. 31, 1978
4094732 Silicon etching process Jun. 13, 1978
4083098 Method of manufacturing electronic devices Apr. 11, 1978
4074300 Insulated gate type field effect transistors Feb. 14, 1978
4069096 Silicon etching process Jan. 17, 1978
4057895 Method of forming sloped members of N-type polycrystalline silicon Nov. 15, 1977
4026733 Process for defining polycrystalline silicon patterns May. 31, 1977
4026740 Process for fabricating narrow polycrystalline silicon members May. 31, 1977











 
 
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