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Class Information
Number: 257/E21.305
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo)
Description: This subclass is indented under subclass E21.3 This subclass is substantially the same in scope as ECLA classification H01L21/3213.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7582568 |
Method of forming a phase changeable structure |
Sep. 1, 2009 |
| 7498209 |
Etching tape and method of fabricating array substrate for liquid crystal display using the same |
Mar. 3, 2009 |
| 7494839 |
Method for manufacturing a membrane sensor |
Feb. 24, 2009 |
| 7482281 |
Substrate processing method |
Jan. 27, 2009 |
| 7442644 |
Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating appara |
Oct. 28, 2008 |
| 7439184 |
Method of making comb-teeth electrode pair |
Oct. 21, 2008 |
| 7419906 |
Method for manufacturing a through conductor |
Sep. 2, 2008 |
| 7416977 |
Method for manufacturing display device, liquid crystal television, and EL television |
Aug. 26, 2008 |
| 7393768 |
Etching of structures with high topography |
Jul. 1, 2008 |
| 7368395 |
Method for fabricating a nano-imprinting mold |
May. 6, 2008 |
| 7297636 |
Methods for fabricating device features having small dimensions |
Nov. 20, 2007 |
| 7262134 |
Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
Aug. 28, 2007 |
| 7250335 |
Methods of fabricating integrated circuit devices including self-aligned contacts with increased alignment margin |
Jul. 31, 2007 |
| 7169711 |
Method of using carbon spacers for critical dimension (CD) reduction |
Jan. 30, 2007 |
| 7132366 |
Method for fabricating semiconductor components using conductive layer and grooves |
Nov. 7, 2006 |
| 7022216 |
Electrolytic etching of metal layers |
Apr. 4, 2006 |
| 6613667 |
Forming an interconnect of a semiconductor device |
Sep. 2, 2003 |
| 6472329 |
Etching aluminum over refractory metal with successive plasmas |
Oct. 29, 2002 |
| 6407443 |
Nanoscale patterning for the formation of extensive wires |
Jun. 18, 2002 |
| 6380582 |
Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates |
Apr. 30, 2002 |
| 6294450 |
Nanoscale patterning for the formation of extensive wires |
Sep. 25, 2001 |
| 6255227 |
Etching process of CoSi2 layers |
Jul. 3, 2001 |
| 6239037 |
Autoaligned etching process for realizing word lines and improving the reliability of semiconductor integrated memory devices |
May. 29, 2001 |
| 6153484 |
Etching process of CoSi.sub.2 layers |
Nov. 28, 2000 |
| 6136670 |
Semiconductor processing methods of forming contacts between electrically conductive materials |
Oct. 24, 2000 |
| 6130165 |
Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates |
Oct. 10, 2000 |
| 6103633 |
Method for cleaning metal precipitates in semiconductor processes |
Aug. 15, 2000 |
| 6087266 |
Methods and apparatus for improving microloading while etching a substrate |
Jul. 11, 2000 |
| 5993686 |
Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
Nov. 30, 1999 |
| 5840630 |
FBI etching enhanced with 1,2 di-iodo-ethane |
Nov. 24, 1998 |
| 5834125 |
Non-reactive anti-reflection coating |
Nov. 10, 1998 |
| 5820926 |
Process for forming and using a non-reactive anti-reflection coating |
Oct. 13, 1998 |
| 5801101 |
Method of forming metal wirings on a semiconductor substrate by dry etching |
Sep. 1, 1998 |
| 5767013 |
Method for forming interconnection in semiconductor pattern device |
Jun. 16, 1998 |
| 5736002 |
Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same |
Apr. 7, 1998 |
| 5672282 |
Process to preserve silver metal while forming integrated circuits |
Sep. 30, 1997 |
| 5662819 |
Plasma processing method with controlled ion/radical ratio |
Sep. 2, 1997 |
| 5614444 |
Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
Mar. 25, 1997 |
| 5607718 |
Polishing method and polishing apparatus |
Mar. 4, 1997 |
| 5598317 |
Laser patterned semiconductor capacitor |
Jan. 28, 1997 |
| 5583070 |
Process to form rugged polycrystalline silicon surfaces |
Dec. 10, 1996 |
| 5505322 |
Process for etching copper containing metallic film and forming copper containing metallic wiring |
Apr. 9, 1996 |
| 5474949 |
Method of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gas |
Dec. 12, 1995 |
| 5449639 |
Disposable metal anti-reflection coating process used together with metal dry/wet etch |
Sep. 12, 1995 |
| 5416048 |
Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage |
May. 16, 1995 |
| 4868137 |
Method of making insulated-gate field effect transistor |
Sep. 19, 1989 |
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