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Class Information
Number: 257/E21.302
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo) > Nitriding of silicon-containing layer (epo)
Description: This subclass is indented under subclass E21.3. This subclass is substantially the same in scope as ECLA classification H01L21/321D.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622402 |
Method for forming underlying insulation film |
Nov. 24, 2009 |
| 7615500 |
Method for depositing film and method for manufacturing semiconductor device |
Nov. 10, 2009 |
| 7605008 |
Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled plasma |
Oct. 20, 2009 |
| 7560396 |
Material for electronic device and process for producing the same |
Jul. 14, 2009 |
| 7534732 |
Semiconductor devices with copper interconnects and composite silicon nitride capping layers |
May. 19, 2009 |
| 7507652 |
Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure |
Mar. 24, 2009 |
| 7494935 |
Method for forming fine pattern of semiconductor device |
Feb. 24, 2009 |
| 7491652 |
In-line processing for forming a silicon nitride film |
Feb. 17, 2009 |
| 7486366 |
Liquid crystal display device and method for fabricating the same |
Feb. 3, 2009 |
| 7439121 |
Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device |
Oct. 21, 2008 |
| 7427572 |
Method and apparatus for forming silicon nitride film |
Sep. 23, 2008 |
| 7408225 |
Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
Aug. 5, 2008 |
| 7358612 |
Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance |
Apr. 15, 2008 |
| 7348282 |
Forming method of gate insulating layer and nitrogen density measuring method thereof |
Mar. 25, 2008 |
| 7303952 |
Method for fabricating doped polysilicon lines |
Dec. 4, 2007 |
| 7291568 |
Method for fabricating a nitrided silicon-oxide gate dielectric |
Nov. 6, 2007 |
| 7259071 |
Semiconductor device with dual gate oxides |
Aug. 21, 2007 |
| 7253108 |
Process for forming a thin film of TiSiN, in particular for phase change memory devices |
Aug. 7, 2007 |
| 7214613 |
Cross diffusion barrier layer in polysilicon |
May. 8, 2007 |
| 7183143 |
Method for forming nitrided tunnel oxide layer |
Feb. 27, 2007 |
| 6991985 |
Method of manufacturing a semiconductor device |
Jan. 31, 2006 |
| 6984575 |
Fabrication process of a semiconductor integrated circuit device |
Jan. 10, 2006 |
| 6962876 |
Method for forming a low-k dielectric layer for a semiconductor device |
Nov. 8, 2005 |
| 6933249 |
Method of fabricating semiconductor device |
Aug. 23, 2005 |
| 6831008 |
Nickel silicide--silicon nitride adhesion through surface passivation |
Dec. 14, 2004 |
| 6825134 |
Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
Nov. 30, 2004 |
| 6815350 |
Method for forming a thin film using an atomic layer deposition (ALD) process |
Nov. 9, 2004 |
| 6794703 |
High pressure reoxidation/anneal of high dielectric constant |
Sep. 21, 2004 |
| 6784100 |
Capacitor with oxidation barrier layer and method for manufacturing the same |
Aug. 31, 2004 |
| 6740977 |
Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same |
May. 25, 2004 |
| 6677211 |
Method for eliminating polysilicon residue |
Jan. 13, 2004 |
| 6664198 |
Method of forming a silicon nitride dielectric layer |
Dec. 16, 2003 |
| 6605846 |
Shallow junction formation |
Aug. 12, 2003 |
| 6579614 |
Structure having refractory metal film on a substrate |
Jun. 17, 2003 |
| 6551896 |
Capacitor for analog circuit, and manufacturing method thereof |
Apr. 22, 2003 |
| 6544905 |
Metal gate trim process by using self assembled monolayers |
Apr. 8, 2003 |
| 6525366 |
Uniform dielectric layer and method to form same |
Feb. 25, 2003 |
| 6524958 |
Method of forming channel in thin film transistor using non-ionic excited species |
Feb. 25, 2003 |
| 6514841 |
Method for manufacturing gate structure for use in semiconductor device |
Feb. 4, 2003 |
| 6503810 |
Method for forming a capacitor for semiconductor devices with an amorphous LixTa1-xO3 dieletric layer having a perovskite structure |
Jan. 7, 2003 |
| 6500711 |
Fabrication method for an interpoly dielectric layer |
Dec. 31, 2002 |
| 6495477 |
Method for forming a nitridized interface on a semiconductor substrate |
Dec. 17, 2002 |
| 6486064 |
Shallow junction formation |
Nov. 26, 2002 |
| 6486020 |
High pressure reoxidation/anneal of high dielectric constant materials |
Nov. 26, 2002 |
| 6479344 |
Method of fabricating DRAM capacitor |
Nov. 12, 2002 |
| 6472321 |
Chemical vapor deposition process |
Oct. 29, 2002 |
| 6410400 |
Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer |
Jun. 25, 2002 |
| 6376299 |
Capacitor for semiconductor memory device and method of manufacturing the same |
Apr. 23, 2002 |
| 6365515 |
Chemical vapor deposition process |
Apr. 2, 2002 |
| 6323138 |
Capacitor, methods of forming capacitors, methods for forming silicon nitride layers on silicon-comprising substrates, and methods of densifying silicon nitride layers |
Nov. 27, 2001 |
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