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Class Information
Number: 257/E21.3
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Post treatment (epo)
Description: This subclass is indented under subclass E21.294. This subclass is substantially the same in scope as ECLA classification H01L21/321.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.315 Doping layer (epo) 40
257/E21.302 Nitriding of silicon-containing layer (epo) 114
257/E21.301 Oxidation of silicon-containing layer (epo) 217
257/E21.305 Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (epo) 81
257/E21.303 Planarization (epo) 130


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8575012 Semiconductor device production method and semiconductor device Nov. 5, 2013
8445364 Methods of treating semiconducting materials including melting and cooling May. 21, 2013
8420529 Copper wiring surface protective liquid and method for manufacturing semiconductor circuit Apr. 16, 2013
8354344 Methods for forming metal-germanide layers and devices obtained thereby Jan. 15, 2013
8034725 Method of eliminating small bin defects in high throughput TEOS films Oct. 11, 2011
8017516 Method for stress free conductor removal Sep. 13, 2011
7928506 Semiconductor device and method for manufacturing the same Apr. 19, 2011
7851358 Low temperature method for minimizing copper hillock defects Dec. 14, 2010
7800154 Nonvolatile semiconductor memory device with twin-well Sep. 21, 2010
7713874 Periodic plasma annealing in an ALD-type process May. 11, 2010
7662730 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof Feb. 16, 2010
7602006 Semiconductor flash device Oct. 13, 2009
7540935 Plasma oxidation and removal of oxidized material Jun. 2, 2009
7166543 Methods for forming an enriched metal oxide surface for use in a semiconductor device Jan. 23, 2007
7060577 Method for forming metal silicide layer in active area of semiconductor device Jun. 13, 2006
7037832 Method of forming a conductive pattern by removing a compound with heat in a substantially inert atmosphere May. 2, 2006
7015568 System for ultraviolet atmospheric seed layer remediation Mar. 21, 2006
6992388 Formation of micro rough polysurface for low sheet resistant salicided sub-quarter micron polylines Jan. 31, 2006
6979649 Fabrication method of semiconductor integrated circuit device Dec. 27, 2005
6979848 Memory system with conductive structures embedded in foamed insulator Dec. 27, 2005
6979646 Hardening of copper to improve copper CMP performance Dec. 27, 2005
6979642 Method of self-annealing conductive lines that separates grain size effects from alloy mobility Dec. 27, 2005
6972257 Conductive material patterning methods Dec. 6, 2005
6933234 Method for manufacturing semiconductor device and polishing apparatus Aug. 23, 2005
6919269 Production method for a semiconductor component Jul. 19, 2005
6911405 Semiconductor device and method of manufacturing the same Jun. 28, 2005
6909192 Hardening of copper to improve copper CMP performance Jun. 21, 2005
6872671 Insulators for high density circuits Mar. 29, 2005
6867080 Polysilicon tilting to prevent geometry effects during laser thermal annealing Mar. 15, 2005
6867431 Semiconductor device and method for manufacturing the same Mar. 15, 2005
6838764 Insulators for high density circuits Jan. 4, 2005
6831008 Nickel silicide--silicon nitride adhesion through surface passivation Dec. 14, 2004
6830996 Device performance improvement by heavily doped pre-gate and post polysilicon gate clean Dec. 14, 2004
6806183 Methods for forming capacitors on semiconductor substrates Oct. 19, 2004
6787462 Method of manufacturing semiconductor device having buried metal wiring Sep. 7, 2004
6787480 Manufacturing method of semicondcutor device Sep. 7, 2004
6774029 Method for forming a conductive film and a conductive pattern of a semiconductor device Aug. 10, 2004
6762123 Moisture corrosion inhibitor layer for Al-alloy metallization layers, particularly for electronic devices and corresponding manufacturing method Jul. 13, 2004
6723631 Fabrication method of semiconductor integrated circuit device Apr. 20, 2004
6713383 Semiconductor device manufacturing method Mar. 30, 2004
6692588 Method and apparatus for simultaneously cleaning and annealing a workpiece Feb. 17, 2004
6690044 Approach to avoid buckling BPSG by using an intermediate barrier layer Feb. 10, 2004
6682659 Method for forming corrosion inhibited conductor layer Jan. 27, 2004
6648987 Method for producing nanostructures in thin films Nov. 18, 2003
6645803 Method for modifying the doping level of a silicon layer Nov. 11, 2003
6620700 Silicided undoped polysilicon for capacitor bottom plate Sep. 16, 2003
6617624 Metal gate electrode stack with a passivating metal nitride layer Sep. 9, 2003
6602653 Conductive material patterning methods Aug. 5, 2003
6573607 Semiconductor device and manufacturing method thereof Jun. 3, 2003
6548387 Method for reducing hole defects in the polysilicon layer Apr. 15, 2003

1 2 3 4 5 6










 
 
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