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Class Information
Number: 257/E21.296
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (epo) > Deposition of layer comprising metal, e.g., metal, alloys, metal compounds (epo) > Of metal-silicide layer (epo)
Description: This subclass is indented under subclass E21.295. This subclass is substantially the same in scope as ECLA classification H01L21/3205M2.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8658530 Method of fabricating an epitaxial Ni silicide film Feb. 25, 2014
8637925 Nickel-silicide formation with differential Pt composition Jan. 28, 2014
8580697 CVD flowable gap fill Nov. 12, 2013
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8546259 Nickel silicide formation for semiconductor components Oct. 1, 2013
8541257 Aligned polymers for an organic TFT Sep. 24, 2013
8513714 Electric contacting of semiconductor components having low contact resistance Aug. 20, 2013
8455314 Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage Jun. 4, 2013
8445372 Selective silicide formation using resist etch back May. 21, 2013
8415748 Use of epitaxial Ni silicide Apr. 9, 2013
8367548 Stable silicide films and methods for making the same Feb. 5, 2013
8343867 Method for main spacer trim-back Jan. 1, 2013
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8269224 Light emitting device and method for manufacturing the same Sep. 18, 2012
8183137 Use of dopants to provide low defect gate full silicidation May. 22, 2012
8039388 Main spacer trim-back method for replacement gate process Oct. 18, 2011
8021982 Method of silicide formation by adding graded amount of impurity during metal deposition Sep. 20, 2011
7972958 Method of fabricating semiconductor device Jul. 5, 2011
7955978 Enhanced method of forming nickel silicides Jun. 7, 2011
7871850 Light emitting device and manufacturing method thereof Jan. 18, 2011
7867899 Wordline resistance reduction method and structure in an integrated circuit memory device Jan. 11, 2011
7858518 Method for forming a selective contact and local interconnect in situ Dec. 28, 2010
7833906 Titanium silicon nitride deposition Nov. 16, 2010
7790617 Formation of metal silicide layer over copper interconnect for reliability enhancement Sep. 7, 2010
7767591 Method and device for producing electronic components Aug. 3, 2010
7732289 Method of forming a MOS device with an additional layer Jun. 8, 2010
7632743 Method of manufacturing flash memory device Dec. 15, 2009
7585771 Method of manufacturing semiconductor device Sep. 8, 2009
7534677 Method of fabricating a dual gate oxide May. 19, 2009
7355255 Nickel silicide including indium and a method of manufacture therefor Apr. 8, 2008
7344985 Nickel alloy silicide including indium and a method of manufacture therefor Mar. 18, 2008
7338815 Semiconductor device manufacturing method Mar. 4, 2008
7256123 Method of forming an interface for a semiconductor device Aug. 14, 2007
7208409 Integrated circuit metal silicide method Apr. 24, 2007
7179702 Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same Feb. 20, 2007
7105429 Method of inhibiting metal silicide encroachment in a transistor Sep. 12, 2006
7041584 Method of manufacturing semiconductor device and the semiconductor device May. 9, 2006
6987296 Semiconductor device having contact hole with improved aspect ratio Jan. 17, 2006
6977221 Methods of forming an electrically conductive line Dec. 20, 2005
6943097 Atomic layer deposition of metallic contacts, gates and diffusion barriers Sep. 13, 2005
6943107 Methods of forming a refractory metal silicide Sep. 13, 2005
6914336 Semiconductor device structure and method for manufacturing the same Jul. 5, 2005
6884716 Method of forming a crystalline phase material Apr. 26, 2005
6881663 Methods of fabricating silicide pattern structures Apr. 19, 2005
6841474 Method of forming a refractory metal silicide Jan. 11, 2005
6838375 Buried digit line stack and process for making same Jan. 4, 2005
6835654 Methods of forming an electrically conductive line Dec. 28, 2004
6835659 Electrical coupling stack and processes for making same Dec. 28, 2004
6821874 Method for depositing tungsten silicide film and method for preparing gate electrode/wiring Nov. 23, 2004
6815762 Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines Nov. 9, 2004

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