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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6716765 Plasma clean for a semiconductor thin film deposition chamber Apr. 6, 2004
6716716 Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth Apr. 6, 2004
6713780 Process using poly-buffered STI Mar. 30, 2004
6713407 Method of forming a metal nitride layer over exposed copper Mar. 30, 2004
6707086 Method for forming crystalline silicon nitride Mar. 16, 2004
6706644 Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors Mar. 16, 2004
6706576 Laser thermal annealing of silicon nitride for increased density and etch selectivity Mar. 16, 2004
6703708 Graded thin films Mar. 9, 2004
6703282 Method of reducing NMOS device current degradation via formation of an HTO layer as an underlying component of a nitride-oxide sidewall spacer Mar. 9, 2004
6704188 Ultra thin TCS (SiCL4) cell nitride for dram capacitor with DCS (SiH2Cl2) interface seeding layer Mar. 9, 2004
6703322 Method of forming multiple oxide layers with different thicknesses in a linear nitrogen doping process Mar. 9, 2004
6703283 Discontinuous dielectric interface for bipolar transistors Mar. 9, 2004
6700202 Semiconductor device having reduced oxidation interface Mar. 2, 2004
6693345 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials Feb. 17, 2004
6690084 Semiconductor device including insulation film and fabrication method thereof Feb. 10, 2004
6686232 Ultra low deposition rate PECVD silicon nitride Feb. 3, 2004
6686294 Method and apparatus for etching silicon nitride film and manufacturing method of semiconductor device Feb. 3, 2004
6680258 Method of forming an opening through an insulating layer of a semiconductor device Jan. 20, 2004
6680259 Dual layer etch stop barrier Jan. 20, 2004
6677661 Semiconductive wafer assemblies Jan. 13, 2004
6670275 Method of rounding a topcorner of trench Dec. 30, 2003
6670288 Methods of forming a layer of silicon nitride in a semiconductor fabrication process Dec. 30, 2003
6669825 Method of forming a dielectric film Dec. 30, 2003
6670242 Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer Dec. 30, 2003
6664202 Mixed frequency high temperature nitride CVD process Dec. 16, 2003
6660664 Structure and method for formation of a blocked silicide resistor Dec. 9, 2003
6660659 Plasma method and apparatus for processing a substrate Dec. 9, 2003
6656847 Method for etching silicon nitride selective to titanium silicide Dec. 2, 2003
6656840 Method for forming silicon containing layers on a substrate Dec. 2, 2003
6656853 Enhanced deposition control in fabricating devices in a semiconductor wafer Dec. 2, 2003
6649543 Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices Nov. 18, 2003
6642573 Use of high-K dielectric material in modified ONO structure for semiconductor devices Nov. 4, 2003
6642619 System and method for adhesion improvement at an interface between fluorine doped silicon oxide and tantalum Nov. 4, 2003
6632750 Manufacturing method of semiconductor integrated circuit device Oct. 14, 2003
6630396 Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon Oct. 7, 2003
6630413 CVD syntheses of silicon nitride materials Oct. 7, 2003
6627535 Methods and apparatus for forming a film on a substrate Sep. 30, 2003
6627551 Method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process Sep. 30, 2003
6620665 Method for fabricating semiconductor device Sep. 16, 2003
6620740 Methods to form electronic devices Sep. 16, 2003
6620739 Method of manufacturing semiconductor device Sep. 16, 2003
6613698 Lower temperature method for forming high quality silicon-nitrogen dielectrics Sep. 2, 2003
6607953 Structural integrity enhancement of dielectric films Aug. 19, 2003
6597033 Semiconductor memory device and manufacturing method thereof Jul. 22, 2003
6593253 Method of manufacturing semiconductor device Jul. 15, 2003
6593660 Plasma treatment to enhance inorganic dielectric adhesion to copper Jul. 15, 2003
6593653 Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications Jul. 15, 2003
6593609 Semiconductor memory device Jul. 15, 2003
6589611 Deposition and chamber treatment methods Jul. 8, 2003
6576565 RTCVD process and reactor for improved conformality and step-coverage Jun. 10, 2003

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