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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6812135 Adhesion enhancement between CVD dielectric and spin-on low-k silicate films Nov. 2, 2004
6808564 In-situ post epitaxial treatment process Oct. 26, 2004
6809368 TTO nitride liner for improved collar protection and TTO reliability Oct. 26, 2004
6808993 Ultra-thin gate dielectrics Oct. 26, 2004
6803315 Method for blocking implants from the gate of an electronic device via planarizing films Oct. 12, 2004
6803321 Nitride spacer formation Oct. 12, 2004
6800830 Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication Oct. 5, 2004
6800566 Adjustment of N and K values in a DARC film Oct. 5, 2004
6798043 Structure and method for isolating porous low-k dielectric films Sep. 28, 2004
6797637 Semiconductor device fabrication method Sep. 28, 2004
6797582 Vertical thermal nitride mask (anti-collar) and processing thereof Sep. 28, 2004
6794240 Method of fabricating a semiconductor device Sep. 21, 2004
6794309 Method for utilizing rough insulator to enhance metal-insulator-semiconductor reliability Sep. 21, 2004
6790723 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6790793 Method for manufacturing semiconductor device Sep. 14, 2004
6787834 Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth Sep. 7, 2004
6787482 Method to form a DRAM capacitor using low temperature reoxidation Sep. 7, 2004
6787480 Manufacturing method of semicondcutor device Sep. 7, 2004
6787462 Method of manufacturing semiconductor device having buried metal wiring Sep. 7, 2004
6787377 Determining method of thermal processing condition Sep. 7, 2004
6784485 Diffusion barrier layer and semiconductor device containing same Aug. 31, 2004
6780776 Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer Aug. 24, 2004
6777305 Method for fabricating semiconductor device Aug. 17, 2004
6777764 ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process Aug. 17, 2004
6777171 Fluorine-containing layers for damascene structures Aug. 17, 2004
6773506 Method for producing thin film Aug. 10, 2004
6774462 Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio Aug. 10, 2004
6773970 Method of producing a semiconductor device having improved gate structure Aug. 10, 2004
6774059 High crack resistance nitride process Aug. 10, 2004
6770144 Multideposition SACVD reactor Aug. 3, 2004
6764951 Method for forming nitride capped Cu lines with reduced hillock formation Jul. 20, 2004
6764896 Semiconductor manufacturing method including patterning a capacitor lower electrode by chemical etching Jul. 20, 2004
6759296 Method of manufacturing a flash memory cell Jul. 6, 2004
6759323 Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way Jul. 6, 2004
6756293 Combined gate cap or digit line and spacer deposition using HDP Jun. 29, 2004
6756324 Low temperature processes for making electronic device structures Jun. 29, 2004
6756321 Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant Jun. 29, 2004
6746726 Method for forming film Jun. 8, 2004
6743708 Method of manufacturing semiconductor device including steps of forming groove and recess, and semiconductor device Jun. 1, 2004
6744098 Transistor devices Jun. 1, 2004
6740912 Semiconductor device free of LLD regions May. 25, 2004
6740977 Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same May. 25, 2004
6737747 Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof May. 18, 2004
6737694 Ferroelectric memory device and method of forming the same May. 18, 2004
6734113 Method for forming multiple gate oxide layers May. 11, 2004
6734119 Electro-optical apparatus and method for fabricating a film, semiconductor device and memory device at near atmospheric pressure May. 11, 2004
6730977 Lower temperature method for forming high quality silicon-nitrogen dielectrics May. 4, 2004
6723664 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction Apr. 20, 2004
6723599 Methods of forming capacitors and methods of forming capacitor dielectric layers Apr. 20, 2004
6719919 Composition of matter Apr. 13, 2004

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