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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7473589 Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same Jan. 6, 2009
7473630 Semiconductor device and method for manufacturing same Jan. 6, 2009
7470637 Film formation apparatus and method of using the same Dec. 30, 2008
7465625 Flash memory cell having reduced floating gate to floating gate coupling Dec. 16, 2008
7465643 Semiconductor device with fixed channel ions Dec. 16, 2008
7465663 Semiconductor device fabrication method Dec. 16, 2008
7465669 Method of fabricating a silicon nitride stack Dec. 16, 2008
7465635 Method for manufacturing a gate sidewall spacer using an energy beam treatment Dec. 16, 2008
7462896 Semiconductor memory device and manufacturing method for semiconductor memory device Dec. 9, 2008
7452817 CMP method providing reduced thickness variations Nov. 18, 2008
7452830 Semiconductor devices and methods for manufacturing the same Nov. 18, 2008
7446063 Silicon nitride films Nov. 4, 2008
7439117 Method for designing a micro electromechanical device with reduced self-actuation Oct. 21, 2008
7432184 Integrated PVD system using designated PVD chambers Oct. 7, 2008
7432208 Method of manufacturing suspension structure Oct. 7, 2008
7397074 RF field heated diodes for providing thermally assisted switching to magnetic memory elements Jul. 8, 2008
7393736 Atomic layer deposition of Zr.sub.x Hf.sub.y Sn.sub.1-x-y O.sub.2 films as high k gate dielectrics Jul. 1, 2008
7393731 Semiconductor device and method of manufacturing the same Jul. 1, 2008
7384833 Stress liner for integrated circuits Jun. 10, 2008
7384861 Strain modulation employing process techniques for CMOS technologies Jun. 10, 2008
7372090 Magnetic random access memory device and method of forming the same May. 13, 2008
7368359 Method for manufacturing semiconductor substrate and semiconductor substrate May. 6, 2008
7365029 Method for silicon nitride chemical vapor deposition Apr. 29, 2008
7361613 Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method Apr. 22, 2008
7351668 Film formation method and apparatus for semiconductor process Apr. 1, 2008
7351670 Method for producing silicon nitride films and process for fabricating semiconductor devices using said method Apr. 1, 2008
7341903 Method of forming a field effect transistor having a stressed channel region Mar. 11, 2008
7332447 Method of forming a contact Feb. 19, 2008
7327009 Selective nitride liner formation for shallow trench isolation Feb. 5, 2008
7309627 Method for fabricating a gate mask of a semiconductor device Dec. 18, 2007
7306983 Method for forming dual etch stop liner and protective layer in a semiconductor device Dec. 11, 2007
7303962 Fabricating method of CMOS and MOS device Dec. 4, 2007
7300890 Method and apparatus for forming conformal SiN.sub.x films Nov. 27, 2007
7297641 Method to form ultra high quality silicon-containing compound layers Nov. 20, 2007
7294582 Low temperature silicon compound deposition Nov. 13, 2007
7259071 Semiconductor device with dual gate oxides Aug. 21, 2007
7247582 Deposition of tensile and compressive stressed materials Jul. 24, 2007
7241632 MTJ read head with sidewall spacers Jul. 10, 2007
7241690 Method for conditioning a microelectronics device deposition chamber Jul. 10, 2007
7232765 Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structures Jun. 19, 2007
7223705 Ambient gas treatment of porous dielectric May. 29, 2007
7214628 Plasma gate oxidation process using pulsed RF source power May. 8, 2007
7192888 Low selectivity deposition methods Mar. 20, 2007
7192855 PECVD nitride film Mar. 20, 2007
7138317 Method of generating multiple oxides by plasma nitridation on oxide Nov. 21, 2006
7071129 Enhancing adhesion of silicon nitride films to carbon-containing oxide films Jul. 4, 2006
7071125 Precursors for film formation Jul. 4, 2006
7071111 Sealed nitride layer for integrated circuits Jul. 4, 2006
7067434 Hydrogen free integration of high-k gate dielectrics Jun. 27, 2006
7060555 Semiconductor device and method of manufacturing the same Jun. 13, 2006

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