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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8178448 Film formation method and apparatus for semiconductor process May. 15, 2012
8173554 Method of depositing dielectric film having Si-N bonds by modified peald method May. 8, 2012
8168543 Methods of forming a layer for barrier applications in an interconnect structure May. 1, 2012
8168549 Method of manufacturing semiconductor device and substrate processing apparatus May. 1, 2012
8154059 Semiconductor device and method for manufacturing the same Apr. 10, 2012
8138070 Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles Mar. 20, 2012
8138103 Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device Mar. 20, 2012
8138104 Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure Mar. 20, 2012
8129290 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure Mar. 6, 2012
8129291 Method of depositing dielectric film having Si-N bonds by modified peald method Mar. 6, 2012
8120124 Ultra thin TCS (SiCl.sub.4) cell nitride for DRAM capacitor with DCS (SiH.sub.2Cl.sub.2) interface seeding layer Feb. 21, 2012
8119545 Forming a silicon nitride film by plasma CVD Feb. 21, 2012
8101476 Stress memorization dielectric optimized for NMOS and PMOS Jan. 24, 2012
8101492 Method for making semiconductor device Jan. 24, 2012
8101529 Carbon nanotube resistor, semiconductor device, and manufacturing method thereof Jan. 24, 2012
8084312 Nitrogen based implants for defect reduction in strained silicon Dec. 27, 2011
8076248 Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material Dec. 13, 2011
8076251 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus Dec. 13, 2011
8039937 Method of forming semiconductor chips, the semiconductor chips so formed and chip-stack package having the same Oct. 18, 2011
8030223 Solar cell and method of fabricating the same Oct. 4, 2011
8008188 Method of forming solid blind vias through the dielectric coating on high density interconnect substrate materials Aug. 30, 2011
8008214 Method of forming an insulation structure and method of manufacturing a semiconductor device using the same Aug. 30, 2011
8003531 Method for manufacturing flash memory device Aug. 23, 2011
7999295 Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same Aug. 16, 2011
7989354 Patterning method Aug. 2, 2011
7985700 Composition for forming insulating film and method for fabricating semiconductor device Jul. 26, 2011
7985690 Method for a gate last process Jul. 26, 2011
7981812 Methods for forming ultra thin structures on a substrate Jul. 19, 2011
7981775 Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same Jul. 19, 2011
7972979 Substrate processing method and substrate processing apparatus Jul. 5, 2011
7972941 Method of manufacturing a semiconductor device Jul. 5, 2011
7956393 Composition for photoresist stripper and method of fabricating thin film transistor array substrate Jun. 7, 2011
7951685 Method for manufacturing semiconductor epitaxial crystal substrate May. 31, 2011
7947607 Apparatus and associated method for making a virtual ground array structure that uses inversion bit lines May. 24, 2011
7939438 Method of inhibiting background plating May. 10, 2011
7939436 Method of fabricating a semiconductor device May. 10, 2011
7927953 Nonvolatile semiconductor memory device and method for manufacturing the same Apr. 19, 2011
7910970 Programmable element and manufacturing method of semiconductor device Mar. 22, 2011
7906439 Method of fabricating a MEMS/NEMS electromechanical component Mar. 15, 2011
7902640 Dielectric layer and thin film transistor Mar. 8, 2011
7902001 Method of fabricating thin film device Mar. 8, 2011
7902061 Interconnect structures with encasing cap and methods of making thereof Mar. 8, 2011
7897471 Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices Mar. 1, 2011
7884035 Method of controlling film uniformity and composition of a PECVD-deposited A-SiN.sub.x : H gate dielectric film deposited over a large substrate surface Feb. 8, 2011
7875912 Zr.sub.x Hf.sub.y Sn.sub.1-x-y O.sub.2 films as high k gate dielectrics Jan. 25, 2011
7871940 Apparatus and process for producing thin films and devices Jan. 18, 2011
7871926 Methods and systems for forming at least one dielectric layer Jan. 18, 2011
7867918 Semiconductor topography including a thin oxide-nitride stack and method for making the same Jan. 11, 2011
7855404 Bipolar complementary semiconductor device Dec. 21, 2010
7838353 Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method Nov. 23, 2010

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