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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
4509451 Electron beam induced chemical vapor deposition Apr. 9, 1985
4510172 Technique for thin insulator growth Apr. 9, 1985
4495218 Process for forming thin film Jan. 22, 1985
4477311 Process and apparatus for fabricating a semiconductor device Oct. 16, 1984
4472459 Local oxidation of silicon substrate using LPCVD silicon nitride Sep. 18, 1984
4465705 Method of making semiconductor devices Aug. 14, 1984
4455351 Preparation of photodiodes Jun. 19, 1984
4451969 Method of fabricating solar cells Jun. 5, 1984
4441247 Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate Apr. 10, 1984
4435447 Method for forming an insulating film on a semiconductor substrate surface Mar. 6, 1984
4426656 GaAs FETs Having long-term stability Jan. 17, 1984
4420497 Method of detecting and repairing latent defects in a semiconductor dielectric layer Dec. 13, 1983
4411929 Method for manufacturing semiconductor device Oct. 25, 1983
4402997 Process for improving nitride deposition on a semiconductor wafer by purging deposition tube with oxygen Sep. 6, 1983
4395438 Low pressure chemical vapor deposition of silicon nitride films Jul. 26, 1983
4377819 Semiconductor device Mar. 22, 1983
4365264 Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer Dec. 21, 1982
4364165 Late programming using a silicon nitride interlayer Dec. 21, 1982
4363828 Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas Dec. 14, 1982
4356041 Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer Oct. 26, 1982
4353936 Method of manufacturing semiconductor device Oct. 12, 1982
4343657 Process for producing a semiconductor device Aug. 10, 1982
4342617 Process for forming opening having tapered sides in a plasma nitride layer Aug. 3, 1982
4340617 Method and apparatus for depositing a material on a surface Jul. 20, 1982
4331709 Process of reducing density of fast surface states in MOS devices May. 25, 1982
4331710 Method of forming an insulation film on semiconductor device surface May. 25, 1982
4298629 Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation Nov. 3, 1981
4277320 Process for direct thermal nitridation of silicon semiconductor devices Jul. 7, 1981
4271582 Process for producing a semiconductor device Jun. 9, 1981
4266985 Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate May. 12, 1981
4214953 Process for making semiconductor devices passivated by an integrated heat sink Jul. 29, 1980
4200666 Single component monomer for silicon nitride deposition Apr. 29, 1980
4181564 Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls Jan. 1, 1980
4181751 Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition Jan. 1, 1980
4158717 Silicon nitride film and method of deposition Jun. 19, 1979
4142004 Method of coating semiconductor substrates Feb. 27, 1979
4139401 Method of producing electrically isolated semiconductor devices on common crystalline substrate Feb. 13, 1979
4137141 Process for producing a silicon nitride diffusion barrier on a semiconductor substrate, particularly III-V semiconductor substrates Jan. 30, 1979
4098618 Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation Jul. 4, 1978
4097889 Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z Jun. 27, 1978
4091169 Silicon oxide/silicon nitride mask with improved integrity for semiconductor fabrication May. 23, 1978
4091407 Combination glass/low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub. z May. 23, 1978
4089992 Method for depositing continuous pinhole free silicon nitride films and products produced thereby May. 16, 1978
4084986 Method of manufacturing a semi-insulating silicon layer Apr. 18, 1978
4060827 Semiconductor device and a method of making the same Nov. 29, 1977
4058887 Method for forming a transistor comprising layers of silicon dioxide and silicon nitride Nov. 22, 1977
4056642 Method of fabricating metal-semiconductor interfaces Nov. 1, 1977
4053335 Method of gettering using backside polycrystalline silicon Oct. 11, 1977
4035198 Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits Jul. 12, 1977
4000020 Vapor epitaxial method for depositing gallium arsenide phosphide on germanium and silicon substrate wafers Dec. 28, 1976

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