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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
5032545 Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby Jul. 16, 1991
5028560 Method for forming a thin layer on a semiconductor substrate Jul. 2, 1991
5013690 Method for deposition of silicon films from azidosilane sources May. 7, 1991
5013692 Process for preparing a silicon nitride insulating film for semiconductor memory device May. 7, 1991
5010024 Passivation for integrated circuit structures Apr. 23, 1991
4997482 Coating composition containing hydrolyzed silicate esters and other metal oxide precursors Mar. 5, 1991
4994140 Method capable of forming a fine pattern without crystal defects Feb. 19, 1991
4992299 Deposition of silicon nitride films from azidosilane sources Feb. 12, 1991
4987008 Thin film formation method Jan. 22, 1991
4987102 Process for forming high purity thin films Jan. 22, 1991
4980307 Process for producing a semiconductor device having a silicon oxynitride insulative film Dec. 25, 1990
4960656 Devices and process for producing devices containing silicon nitride films Oct. 2, 1990
4914059 Process for the heat flash vapour phase deposition of an insulating layer on a III-V material substrate and its application to the production of a MIS structure Apr. 3, 1990
4866003 Plasma vapor deposition of an improved passivation film using electron cyclotron resonance Sep. 12, 1989
4863755 Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors Sep. 5, 1989
4855258 Native oxide reduction for sealing nitride deposition Aug. 8, 1989
4830987 Contactless annealing process using cover slices May. 16, 1989
4826733 Sin-containing coatings for electronic devices May. 2, 1989
4812712 Plasma processing apparatus Mar. 14, 1989
4776925 Method of forming dielectric thin films on silicon by low energy ion beam bombardment Oct. 11, 1988
4772489 Method of annealing a compound semiconductor substrate Sep. 20, 1988
4762728 Low temperature plasma nitridation process and applications of nitride films formed thereby Aug. 9, 1988
4756977 Multilayer ceramics from hydrogen silsesquioxane Jul. 12, 1988
4753856 Multilayer ceramic coatings from silicate esters and metal oxides Jun. 28, 1988
4751191 Method of fabricating solar cells with silicon nitride coating Jun. 14, 1988
4743953 Random access memory cell with MIS capacitor having insulator of oxide of doped metal May. 10, 1988
4735921 Nitridation of silicon and other semiconductors using alkali metal catalysts Apr. 5, 1988
4732871 Process for producing undercut dummy gate mask profiles for MESFETs Mar. 22, 1988
4717602 Method for producing silicon nitride layers Jan. 5, 1988
4714518 Dual layer encapsulation coating for III-V semiconductor compounds Dec. 22, 1987
4705760 Preparation of a surface for deposition of a passinating layer Nov. 10, 1987
4692344 Method of forming a dielectric film and semiconductor device including said film Sep. 8, 1987
4673475 Dual ion beam deposition of dense films Jun. 16, 1987
4667395 Method for passivating an undercut in semiconductor device preparation May. 26, 1987
4664747 Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same May. 12, 1987
4645683 Method of manufacturing a semiconductor device Feb. 24, 1987
4626293 Method of making a high voltage DMOS transistor Dec. 2, 1986
4624736 Laser/plasma chemical processing of substrates Nov. 25, 1986
4622096 Method of manufacturing a semiconductor device comprising a silicon body, in which a sunken oxide layer is locally provided Nov. 11, 1986
4621277 Semiconductor device having insulating film Nov. 4, 1986
4618541 Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article Oct. 21, 1986
4600624 Composite insulator structure Jul. 15, 1986
4588610 Photo-chemical vapor deposition of silicon nitride film May. 13, 1986
4579623 Method and apparatus for surface treatment by plasma Apr. 1, 1986
4575921 Silicon nitride formation and use in self-aligned semiconductor device manufacturing method Mar. 18, 1986
4571348 Reducing hydrogen content of vacuum deposited films Feb. 18, 1986
4564394 Preventing lateral oxide growth by first forming nitride layer followed by a composite masking layer Jan. 14, 1986
4551910 MOS Isolation processing Nov. 12, 1985
4528211 Silicon nitride formation and use in self-aligned semiconductor device manufacturing method Jul. 9, 1985
4522886 Method of ion beam synthesis of thin silicon nitride films and resulting articles Jun. 11, 1985

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