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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
5981403 Layered silicon nitride deposition process Nov. 9, 1999
5972765 Use of deuterated materials in semiconductor processing Oct. 26, 1999
5966595 Method to form a DRAM capacitor using low temperature reoxidation Oct. 12, 1999
5962344 Plasma treatment method for PECVD silicon nitride films for improved passivation layers on semiconductor metal interconnections Oct. 5, 1999
5943599 Method of fabricating a passivation layer for integrated circuits Aug. 24, 1999
5935873 Deposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etching Aug. 10, 1999
5928964 System and method for anisotropic etching of silicon nitride Jul. 27, 1999
5926689 Process for reducing circuit damage during PECVD in single wafer PECVD system Jul. 20, 1999
5926739 Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride Jul. 20, 1999
5923992 Integrated circuit formed with shallow isolation structures having nitride placed on the trench dielectric Jul. 13, 1999
5918147 Process for forming a semiconductor device with an antireflective layer Jun. 29, 1999
5914279 Silicon nitride sidewall and top surface layer separating conductors Jun. 22, 1999
5913149 Method for fabricating stacked layer silicon nitride for low leakage and high capacitance Jun. 15, 1999
5907792 Method of forming a silicon nitride layer May. 25, 1999
5899752 Method for in-situ cleaning of native oxide from silicon surfaces May. 4, 1999
5895223 Method for etching nitride Apr. 20, 1999
5889328 Refractory metal capped low resistivity metal conductor lines and vias Mar. 30, 1999
5882978 Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor Mar. 16, 1999
5880029 Method of passivating semiconductor devices and the passivated devices Mar. 9, 1999
5880483 Semiconductor devices Mar. 9, 1999
5876788 High dielectric TiO.sub.2 -SiN composite films for memory applications Mar. 2, 1999
5877095 Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen Mar. 2, 1999
5874368 Silicon nitride from bis(tertiarybutylamino)silane Feb. 23, 1999
5861329 Method of fabricating metal-oxide semiconductor (MOS) transistors with reduced level of degradation caused by hot carriers Jan. 19, 1999
5858870 Methods for gap fill and planarization of intermetal dielectrics Jan. 12, 1999
5851603 Method for making a plasma-enhanced chemical vapor deposited SiO.sub.2 Si.sub.3 N.sub.4 multilayer passivation layer for semiconductor applications Dec. 22, 1998
5838056 Semiconductor device applied to composite insulative film and manufacturing method thereof Nov. 17, 1998
5834363 Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer Nov. 10, 1998
5831283 Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD Nov. 3, 1998
5821603 Method for depositing double nitride layer in semiconductor processing Oct. 13, 1998
5811865 Dielectric in an integrated circuit Sep. 22, 1998
5811347 Nitrogenated trench liner for improved shallow trench isolation Sep. 22, 1998
5795821 Process for improving the interface union among dielectric materials in an integrated circuit manufacture Aug. 18, 1998
5795833 Method for fabricating passivation layers over metal lines Aug. 18, 1998
5788767 Method for forming single sin layer as passivation film Aug. 4, 1998
5776235 Thick opaque ceramic coatings Jul. 7, 1998
5756404 Two-step nitride deposition May. 26, 1998
5731235 Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor Mar. 24, 1998
5731238 Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same Mar. 24, 1998
5700725 Apparatus and method for making integrated circuits Dec. 23, 1997
5633202 High tensile nitride layer May. 27, 1997
5629242 Process for planarizing surface of a semiconductor device May. 13, 1997
5627403 Adhesion between dielectric layers in an integrated circuit May. 6, 1997
5591494 Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition Jan. 7, 1997
5591486 Method for forming a film on a substrate by activating a reactive gas Jan. 7, 1997
5592004 Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries Jan. 7, 1997
5587039 Plasma etch equipment Dec. 24, 1996
5585673 Refractory metal capped low resistivity metal conductor lines and vias Dec. 17, 1996
5578530 Manufacturing method of semiconductor device which includes forming a silicon nitride layer using a Si, N, and F containing compound Nov. 26, 1996
5578848 Ultra thin dielectric for electronic devices and method of making same Nov. 26, 1996

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