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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6246105 Semiconductor device and manufacturing process thereof Jun. 12, 2001
6245681 Dual temperature nitride strip process Jun. 12, 2001
6245617 Method of fabricating dielectric layer Jun. 12, 2001
6242367 Method of forming silicon nitride films Jun. 5, 2001
6239043 Method for modulating uniformity of deposited layer thickness May. 29, 2001
6235571 Uniform dielectric layer and method to form same May. 22, 2001
6235608 STI process by method of in-situ multilayer dielectric deposition May. 22, 2001
6235648 Semiconductor device including insulation film and fabrication method thereof May. 22, 2001
6235654 Process for forming PECVD nitride with a very low deposition rate May. 22, 2001
6232194 Silicon nitride capped poly resistor with SAC process May. 15, 2001
6232218 Etch stop for use in etching of silicon oxide May. 15, 2001
6228780 Non-shrinkable passivation scheme for metal em improvement May. 8, 2001
6228737 Method of manufacturing semiconductor device May. 8, 2001
6228732 Tunnel nitride for improved polysilicon emitter May. 8, 2001
6228707 Semiconductor arrangement having capacitive structure and manufacture thereof May. 8, 2001
6228741 Method for trench isolation of semiconductor devices May. 8, 2001
6228761 Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide May. 8, 2001
6225210 High density capping layers with improved adhesion to copper interconnects May. 1, 2001
6225241 Catalytic deposition method for a semiconductor surface passivation film May. 1, 2001
6225236 Method for reforming undercoating surface and method for production of semiconductor device May. 1, 2001
6225203 PE-SiN spacer profile for C2 SAC isolation window May. 1, 2001
6225167 Method of generating multiple oxide thicknesses by one oxidation step using NH3 nitridation followed by re-oxidation May. 1, 2001
6225216 Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide May. 1, 2001
6222257 Etch stop for use in etching of silicon oxide Apr. 24, 2001
6218720 Semiconductor topography employing a nitrogenated shallow trench isolation structure Apr. 17, 2001
6214713 Two step cap nitride deposition for forming gate electrodes Apr. 10, 2001
6214684 Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator Apr. 10, 2001
6214687 Method of forming a capacitor and a capacitor construction Apr. 10, 2001
6211022 Field leakage by using a thin layer of nitride deposited by chemical vapor deposition Apr. 3, 2001
6207554 Gap filling process in integrated circuits using low dielectric constant materials Mar. 27, 2001
6207586 Oxide/nitride stacked gate dielectric and associated methods Mar. 27, 2001
6207497 Conformity of ultra-thin nitride deposition for DRAM capacitor Mar. 27, 2001
6204070 Method for manufacturing ferroelectric capacitor Mar. 20, 2001
6204201 Method of processing films prior to chemical vapor deposition using electron beam processing Mar. 20, 2001
6204142 Methods to form electronic devices Mar. 20, 2001
6200844 Method of manufacturing dielectric film of capacitor in dynamic random access memory Mar. 13, 2001
6200852 Method to fabricate DRAM capacitor Mar. 13, 2001
6197660 Integration of CMP and wet or dry etching for STI Mar. 6, 2001
6194775 Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same Feb. 27, 2001
6187691 Method of forming film on semiconductor substrate in film-forming apparatus Feb. 13, 2001
6184159 Interlayer dielectric planarization process Feb. 6, 2001
6184150 Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography Feb. 6, 2001
6177312 Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device Jan. 23, 2001
6177363 Method for forming a nitride layer suitable for use in advanced gate dielectric materials Jan. 23, 2001
6171981 Electrode passivation layer of semiconductor device and method for forming the same Jan. 9, 2001
6171977 Semiconductor device applied to composite insulative film manufacturing method thereof Jan. 9, 2001
6171917 Transistor sidewall spacers composed of silicon nitride CVD deposited from a high density plasma source Jan. 9, 2001
6165917 Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD Dec. 26, 2000
6165916 Film-forming method and film-forming apparatus Dec. 26, 2000
6162666 Method to form a DRAM capacitor using low temperature reoxidation Dec. 19, 2000

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