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Class Information
Number: 257/E21.293
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo) > Of silicon nitride (epo)
Description: This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6350665 Semiconductor structure and method of making contacts and source and/or drain junctions in a semiconductor device Feb. 26, 2002
6350707 Method of fabricating capacitor dielectric Feb. 26, 2002
6348420 Situ dielectric stacks Feb. 19, 2002
6348419 Modification of the wet characteristics of deposited layers and in-line control Feb. 19, 2002
6348410 Low temperature hillock suppression method in integrated circuit interconnects Feb. 19, 2002
6346454 Method of making dual damascene interconnect structure and metal electrode capacitor Feb. 12, 2002
6340613 Structural integrity enhancement of dielectric films Jan. 22, 2002
6339025 Method of fabricating a copper capping layer Jan. 15, 2002
6338756 In-situ post epitaxial treatment process Jan. 15, 2002
6337282 Method for forming a dielectric layer Jan. 8, 2002
6333547 Semiconductor device and method of manufacturing the same Dec. 25, 2001
6326321 Methods of forming a layer of silicon nitride in semiconductor fabrication processes Dec. 4, 2001
6326296 Method of forming dual damascene structure with improved contact/via edge integrity Dec. 4, 2001
6326322 Method for depositing a silicon nitride layer Dec. 4, 2001
6323118 Borderless dual damascene contact Nov. 27, 2001
6323143 Method for making silicon nitride-oxide ultra-thin gate insulating layers for submicrometer field effect transistors Nov. 27, 2001
6323554 Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD Nov. 27, 2001
6323138 Capacitor, methods of forming capacitors, methods for forming silicon nitride layers on silicon-comprising substrates, and methods of densifying silicon nitride layers Nov. 27, 2001
6319763 Manufacturing method for semiconductor device Nov. 20, 2001
6316308 Methods to form electronic devices Nov. 13, 2001
6316371 Method for the chemical treatment of a semiconductor substrate Nov. 13, 2001
6316372 Methods of forming a layer of silicon nitride in a semiconductor fabrication process Nov. 13, 2001
6309801 Method of manufacturing an electronic device comprising two layers of organic-containing material Oct. 30, 2001
6303499 Process for preparing semiconductor device Oct. 16, 2001
6297171 Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride Oct. 2, 2001
6294102 Selective dry etch of a dielectric film Sep. 25, 2001
6294807 Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers Sep. 25, 2001
6291088 Inorganic overcoat for particulate transport electrode grid Sep. 18, 2001
6291329 Protective oxide buffer layer for ARC removal Sep. 18, 2001
6291288 Method of fabricating a thin and structurally-undefective dielectric structure for a storage capacitor in dynamic random-access memory Sep. 18, 2001
6287916 Method for forming a semiconductor device using LPCVD nitride to protect floating gate from charge loss Sep. 11, 2001
6287935 Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors Sep. 11, 2001
6284633 Method for forming a tensile plasma enhanced nitride capping layer over a gate electrode Sep. 4, 2001
6284583 Semiconductor device and method of manufacturing the same Sep. 4, 2001
6277681 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics Aug. 21, 2001
6277200 Dielectric film deposition employing a bistertiarybutylaminesilane precursor Aug. 21, 2001
6277720 Silicon nitride dopant diffusion barrier in integrated circuits Aug. 21, 2001
6277725 Method for fabricating passivation layer on metal pad Aug. 21, 2001
6274510 Lower temperature method for forming high quality silicon-nitrogen dielectrics Aug. 14, 2001
6268295 Method of manufacturing semiconductor device Jul. 31, 2001
6268299 Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability Jul. 31, 2001
6265317 Top corner rounding for shallow trench isolation Jul. 24, 2001
6265322 Selective growth process for group III-nitride-based semiconductors Jul. 24, 2001
6261951 Plasma treatment to enhance inorganic dielectric adhesion to copper Jul. 17, 2001
6258690 Method of manufacturing semiconductor device Jul. 10, 2001
6255217 Plasma treatment to enhance inorganic dielectric adhesion to copper Jul. 3, 2001
6251764 Method to form an L-shaped silicon nitride sidewall spacer Jun. 26, 2001
6252295 Adhesion of silicon carbide films Jun. 26, 2001
6251772 Dielectric adhesion enhancement in damascene process for semiconductors Jun. 26, 2001
6245660 Process for production of semiconductor device having contact plugs with reduced leakage current Jun. 12, 2001

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