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Class Information
Number: 257/E21.292
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo)
Description: This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/318.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.293 Of silicon nitride (epo) 854

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5858870 Methods for gap fill and planarization of intermetal dielectrics Jan. 12, 1999
5733797 Method of making a semiconductor device with moisture impervious film Mar. 31, 1998
5663087 Method for forming silicon nitride film having low leakage current and high break down voltage Sep. 2, 1997
5654208 Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step Aug. 5, 1997
5652061 Devices comprising films of .beta.-C.sub.3 N.sub.4 Jul. 29, 1997
5650361 Low temperature photolytic deposition of aluminum nitride thin films Jul. 22, 1997
5583077 Integrated dual layer passivation process to suppress stress-induced metal voids Dec. 10, 1996
5468688 Process for the low temperature creation of nitride films on semiconductors Nov. 21, 1995
5336361 Method of manufacturing an MIS-type semiconductor device Aug. 9, 1994
5330611 Cubic boron nitride carbide films Jul. 19, 1994
5326424 Cubic boron nitride phosphide films Jul. 5, 1994
5324690 Semiconductor device having a ternary boron nitride film and a method for forming the same Jun. 28, 1994
5279869 Laser deposition of cubic boron nitride films Jan. 18, 1994
5270263 Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering Dec. 14, 1993
5264296 Laser depositon of crystalline boron nitride films Nov. 23, 1993
5227318 Method of making a cubic boron nitride bipolar transistor Jul. 13, 1993
5217567 Selective etching process for boron nitride films Jun. 8, 1993
5187121 Process for fabrication of a semiconductor structure and contact stud Feb. 16, 1993
5168343 Semiconductor integrated circuit device having improved trench isolation Dec. 1, 1992
5164810 Cubic boron nitride bipolar transistor Nov. 17, 1992
5139591 Laser deposition of crystalline boron nitride films Aug. 18, 1992
5132756 Method of manufacturing semiconductor devices Jul. 21, 1992
5122483 Method of forming a highly insulative thin films Jun. 16, 1992
5080753 Laser deposition of crystalline boron nitride films Jan. 14, 1992
4987008 Thin film formation method Jan. 22, 1991
4987102 Process for forming high purity thin films Jan. 22, 1991
4957604 Production of a thin x-ray amorphous aluminum nitride or aluminum silicon nitride film on a surface Sep. 18, 1990
4957773 Deposition of boron-containing films from decaborane Sep. 18, 1990
4859253 Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface Aug. 22, 1989
4849377 Active area planarization with self-aligned contacts Jul. 18, 1989
4706377 Passivation of gallium arsenide by nitrogen implantation Nov. 17, 1987
4686559 Topside sealing of integrated circuit device Aug. 11, 1987
4671845 Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby Jun. 9, 1987
4656101 Electronic device with a protective film Apr. 7, 1987
4645683 Method of manufacturing a semiconductor device Feb. 24, 1987
4643950 Semiconductor device Feb. 17, 1987
4642879 Method of making self-aligned FET using GaAs substrate and spatially controlled implanted channel region Feb. 17, 1987
4605947 Titanium nitride MOS device gate electrode and method of producing Aug. 12, 1986
4585706 Sintered aluminum nitride semi-conductor device Apr. 29, 1986
4570328 Method of producing titanium nitride MOS device gate electrode Feb. 18, 1986
4546372 Phosphorous-nitrogen based glasses for the passivation of III-V semiconductor materials Oct. 8, 1985
4540466 Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor Sep. 10, 1985
4540673 Sintered aluminum nitride and semi-conductor device using the same Sep. 10, 1985
4509451 Electron beam induced chemical vapor deposition Apr. 9, 1985
4448633 Passivation of III-V semiconductor surfaces by plasma nitridation May. 15, 1984
4443489 Method for the formation of phosphorous-nitrogen based glasses useful for the passivation of III-V semiconductor materials Apr. 17, 1984
4429011 Composite conductive structures and method of making same Jan. 31, 1984
4298629 Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation Nov. 3, 1981
4204933 Electrocoating process for producing a semiconducting film May. 27, 1980
4126880 Germanium-containing silicon nitride film Nov. 21, 1978

1 2 3 4

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