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Class Information
Number: 257/E21.292
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Inorganic layer composed of nitride (epo)
Description: This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/318.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.293 Of silicon nitride (epo) 854


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8546272 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus Oct. 1, 2013
8536699 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus Sep. 17, 2013
8399361 Semiconductor device and method of manufacturing the same Mar. 19, 2013
8357608 Multi component dielectric layer Jan. 22, 2013
8183165 Plasma processing method May. 22, 2012
8071483 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus Dec. 6, 2011
7964514 Multiple nitrogen plasma treatments for thin SiON dielectrics Jun. 21, 2011
7955994 Method for manufacturing semiconductor device, semiconductor device, and electronic appliance Jun. 7, 2011
7948061 Group III nitride-based compound semiconductor device May. 24, 2011
7851915 Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same Dec. 14, 2010
7820557 Method for nitriding substrate and method for forming insulating film Oct. 26, 2010
7691736 Minimizing low-k dielectric damage during plasma processing Apr. 6, 2010
7691758 Method of forming insulating film and method of manufacturing semiconductor device Apr. 6, 2010
7651950 Method for forming a pattern of a semiconductor device Jan. 26, 2010
7598540 High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same Oct. 6, 2009
7592630 Nitride-based light-emitting device and method of manufacturing the same Sep. 22, 2009
7589027 Method of manufacturing semiconductor device Sep. 15, 2009
7550851 Adhesion of tungsten nitride films to a silicon surface Jun. 23, 2009
7504332 Water-barrier performance of an encapsulating film Mar. 17, 2009
7488613 Nitride-based light-emitting device and method of manufacturing the same Feb. 10, 2009
7341903 Method of forming a field effect transistor having a stressed channel region Mar. 11, 2008
7335584 Method of using SACVD deposition and corresponding deposition reactor Feb. 26, 2008
7329591 Method for forming silicon-containing film and method for decreasing number of particles Feb. 12, 2008
7306983 Method for forming dual etch stop liner and protective layer in a semiconductor device Dec. 11, 2007
7297986 Nitride-based light-emitting device and method of manufacturing the same Nov. 20, 2007
7279433 Deposition and patterning of boron nitride nanotube ILD Oct. 9, 2007
7259071 Semiconductor device with dual gate oxides Aug. 21, 2007
7160802 Adhesion of tungsten nitride films to a silicon surface Jan. 9, 2007
7141500 Methods for forming aluminum containing films utilizing amino aluminum precursors Nov. 28, 2006
7067439 ALD metal oxide deposition process using direct oxidation Jun. 27, 2006
7045438 Light emitting device, semiconductor device, and method of fabricating the devices May. 16, 2006
7042093 Semiconductor device using metal nitride as insulating film May. 9, 2006
6964879 Method of fabricating a contact Nov. 15, 2005
6962876 Method for forming a low-k dielectric layer for a semiconductor device Nov. 8, 2005
6960537 Incorporation of nitrogen into high k dielectric film Nov. 1, 2005
6958175 Film forming method and film forming device Oct. 25, 2005
6919101 Method to deposit an impermeable film on porous low-k dielectric film Jul. 19, 2005
6911124 Method of depositing a TaN seed layer Jun. 28, 2005
6905938 Method of forming interconnect structure with low dielectric constant Jun. 14, 2005
6894306 Field emission device having a covering comprising aluminum nitride May. 17, 2005
6878415 Methods for chemical formation of thin film layers using short-time thermal processes Apr. 12, 2005
6876081 Composite dielectric layers Apr. 5, 2005
6844227 Semiconductor devices and method for manufacturing the same Jan. 18, 2005
6835975 DRAM circuitry having storage capacitors which include capacitor dielectric regions comprising aluminum nitride Dec. 28, 2004
6825134 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow Nov. 30, 2004
6821451 Dry etching method, microfabrication process and dry etching mask Nov. 23, 2004
6815350 Method for forming a thin film using an atomic layer deposition (ALD) process Nov. 9, 2004
6812156 Method to reduce residual particulate contamination in CVD and PVD semiconductor wafer manufacturing Nov. 2, 2004
6800567 Method for forming polyatomic layers Oct. 5, 2004
6794311 Method and apparatus for treating low k dielectric layers to reduce diffusion Sep. 21, 2004

1 2 3 4










 
 
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