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Class Information
Number: 257/E21.29
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Formed by oxidation (epo) > Of metallic layer, e.g., al deposited on body, e.g., formation of multi-layer insulating structures (epo)
Description: This subclass is indented under subclass E21.282. This subclass is substantially the same in scope as ECLA classification H01L21/316C3.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.291 By anodic oxidation (epo) 79


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8652957 High-K gate dielectric oxide Feb. 18, 2014
8575038 Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant ga Nov. 5, 2013
8563371 Method of forming semiconductor device Oct. 22, 2013
8252620 Process for impregnating photosensitizing dye onto conductive substrate of photoanode of a solar cell Aug. 28, 2012
8236578 Electronic device including a magneto-resistive memory device and a process for forming the electronic device Aug. 7, 2012
8148205 Method of electrically connecting a microelectronic component Apr. 3, 2012
8114711 Method of electrically connecting a microelectronic component Feb. 14, 2012
8110469 Graded dielectric layers Feb. 7, 2012
8026161 Highly reliable amorphous high-K gate oxide ZrO2 Sep. 27, 2011
7820537 Method for fabricating semiconductor device Oct. 26, 2010
7799680 Surface preparation prior to deposition on germanium Sep. 21, 2010
7790627 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film Sep. 7, 2010
7786552 Semiconductor device having hydrogen-containing layer Aug. 31, 2010
7737024 Small grain size, conformal aluminum interconnects and method for their formation Jun. 15, 2010
7709909 Method for making a semiconductor device having a high-k gate dielectric May. 4, 2010
7691758 Method of forming insulating film and method of manufacturing semiconductor device Apr. 6, 2010
7659475 Method for backside surface passivation of solar cells and solar cells with such passivation Feb. 9, 2010
7572706 Source/drain stressor and method therefor Aug. 11, 2009
7479417 Method for manufacturing contact structure of pixel electrode of liquid crystal display device Jan. 20, 2009
7473654 Method of forming an oxide film, an oxide film, a component and an electronic apparatus Jan. 6, 2009
7465618 Semiconductor device and method for fabricating the same Dec. 16, 2008
7393727 Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit Jul. 1, 2008
7378341 Automatic process control of after-etch-inspection critical dimension May. 27, 2008
7335538 Method for manufacturing bottom substrate of liquid crystal display device Feb. 26, 2008
7320943 Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Jan. 22, 2008
7312152 Lactate-containing corrosion inhibitor Dec. 25, 2007
7304004 System and method for forming a gate dielectric Dec. 4, 2007
7235448 Dielectric layer forming method and devices formed therewith Jun. 26, 2007
7220647 Method of cleaning wafer and method of manufacturing gate structure May. 22, 2007
7217661 Small grain size, conformal aluminum interconnects and method for their formation May. 15, 2007
7189647 Sequential station tool for wet processing of semiconductor wafers Mar. 13, 2007
7169673 Atomic layer deposited nanolaminates of HfO.sub.2/ZrO.sub.2 films as gate dielectrics Jan. 30, 2007
7144783 Reducing gate dielectric material to form a metal gate electrode extension Dec. 5, 2006
7132360 Method for treating a semiconductor surface to form a metal-containing layer Nov. 7, 2006
7071107 Method for manufacturing a semiconductor device Jul. 4, 2006
7067411 Method to prevent metal oxide formation during polycide reoxidation Jun. 27, 2006
7064058 Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics Jun. 20, 2006
7056784 Methods of forming capacitors by ALD to prevent oxidation of the lower electrode Jun. 6, 2006
7053432 Enhanced surface area capacitor fabrication methods May. 30, 2006
7052953 Dielectric material forming methods and enhanced dielectric materials May. 30, 2006
7045430 Atomic layer-deposited LaAlO3 films for gate dielectrics May. 16, 2006
7041609 Systems and methods for forming metal oxides using alcohols May. 9, 2006
7041608 Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices May. 9, 2006
7037862 Dielectric layer forming method and devices formed therewith May. 2, 2006
7037574 Atomic layer deposition for fabricating thin films May. 2, 2006
7030042 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds Apr. 18, 2006
7022605 Atomic layer deposition methods Apr. 4, 2006
7015152 Method of film deposition, and fabrication of structures Mar. 21, 2006
7009264 Selective spacer to prevent metal oxide formation during polycide reoxidation Mar. 7, 2006
6998356 Method of fabricating a semiconductor device including a dielectric layer formed using a reactive agent Feb. 14, 2006

1 2 3 4 5










 
 
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