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Class Information
Number: 257/E21.289
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Formed by oxidation (epo) > Of semiconductor material, e.g., by oxidation of semiconductor body itself (epo) > By anodic oxidation (epo) > Of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.287. This subclass is substantially the same in scope as ECLA classification H01L21/316C2C3.










Patents under this class:

Patent Number Title Of Patent Date Issued
7939454 Module and lamination process for multijunction cells May. 10, 2011
7038300 Apparatus with improved layers of group III-nitride semiconductor May. 2, 2006
7001813 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths Feb. 21, 2006
6699760 Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects Mar. 2, 2004
5147827 Method for producing a passivation film of InP compound semiconductor Sep. 15, 1992
5086328 Photo-anodic oxide surface passivation for semiconductors Feb. 4, 1992
4863880 InSb device manufacturing by anodic oxidation Sep. 5, 1989
4569728 Selective anodic oxidation of semiconductors for pattern generation Feb. 11, 1986
4524378 Anodizable metallic contacts to mercury cadmium telleride Jun. 18, 1985
4462871 Epitaxial thinning process Jul. 31, 1984
4454008 Electrochemical method for producing a passivated junction in alloy semiconductors Jun. 12, 1984
4297176 Surface passivation of compound semiconductors Oct. 27, 1981
4268535 Process for growing a superficial dielectric structure upon a substrate, made of a chemical compound, comprising at least two elements May. 19, 1981
4247373 Method of making semiconductor device Jan. 27, 1981
4226667 Oxide masking of gallium arsenide Oct. 7, 1980
4194954 Electrolytic etch preparation of semiconductor surfaces Mar. 25, 1980
4157610 Method of manufacturing a field effect transistor Jun. 12, 1979
4154663 Method of providing thinned layer of epitaxial semiconductor material having substantially uniform reverse breakdown voltage characteristic May. 15, 1979
4145262 Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method Mar. 20, 1979
4119993 GaAs mosfet Oct. 10, 1978
4116722 Method for manufacturing compound semiconductor devices Sep. 26, 1978
4080721 Fabrication of semiconductor device Mar. 28, 1978
4026741 Technique for preparation of stoichiometric III-V compound semiconductor surfaces May. 31, 1977
4015893 Compound semiconductor optical integrated circuit having isolation zones for light transmission Apr. 5, 1977
3982265 Devices containing aluminum-V semiconductor and method for making Sep. 21, 1976











 
 
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