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Class Information
Number: 257/E21.287
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Formed by oxidation (epo) > Of semiconductor material, e.g., by oxidation of semiconductor body itself (epo) > By anodic oxidation (epo)
Description: This subclass is indented under subclass E21.283. This subclass is substantially the same in scope as ECLA classification H01L21/316C2C.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.288 Of silicon (epo) 49
257/E21.289 Of group iii-v compound (epo) 25


Patents under this class:

Patent Number Title Of Patent Date Issued
8470689 Method for forming a multilayer structure Jun. 25, 2013
7977254 Method of forming a gate insulator in group III-V nitride semiconductor devices Jul. 12, 2011
7951691 Method for producing a thin semiconductor chip comprising an integrated circuit May. 31, 2011
7727786 Photon-based memory device Jun. 1, 2010
7479417 Method for manufacturing contact structure of pixel electrode of liquid crystal display device Jan. 20, 2009
7371674 Nanostructure-based package interconnect May. 13, 2008
7335538 Method for manufacturing bottom substrate of liquid crystal display device Feb. 26, 2008
6376285 Annealed porous silicon with epitaxial layer for SOI Apr. 23, 2002
6140246 In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates Oct. 31, 2000
5880038 Method for producing semiconductor device Mar. 9, 1999
5656147 Method for fabricating a switching device by anodization Aug. 12, 1997
4116722 Method for manufacturing compound semiconductor devices Sep. 26, 1978











 
 
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