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Class Information
Number: 257/E21.286
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Formed by oxidation (epo) > Of semiconductor material, e.g., by oxidation of semiconductor body itself (epo) > By thermal oxidation (epo) > Of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.284. This subclass is substantially the same in scope as ECLA classification H01L21/316C2B3.










Patents under this class:

Patent Number Title Of Patent Date Issued
8193016 Semiconductor laser device and method of manufacturing the same Jun. 5, 2012
7939454 Module and lamination process for multijunction cells May. 10, 2011
7932160 Planar oxidation method for producing a localised buried insulator Apr. 26, 2011
7670884 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device Mar. 2, 2010
7655489 Monolithically-pumped erbium-doped waveguide amplifiers and lasers Feb. 2, 2010
7442654 Method of forming an oxide layer on a compound semiconductor structure Oct. 28, 2008
7001851 Steam oxidation method Feb. 21, 2006
6979581 Method of manufacturing semiconductor light emitting device and oxidation furnace Dec. 27, 2005
6933181 Method for fabricating semiconductor device Aug. 23, 2005
6933244 Method of fabrication for III-V semiconductor surface passivation Aug. 23, 2005
6914012 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same Jul. 5, 2005
6756320 Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure Jun. 29, 2004
6555407 Method for the controlled oxidiation of materials Apr. 29, 2003
6531414 Method of oxidizing strain-compensated superlattice of group III-V semiconductor Mar. 11, 2003
6472695 Increased lateral oxidation rate of aluminum indium arsenide Oct. 29, 2002
6326317 Method for fabricating metal oxide semiconductor field effect transistor (MOSFET) Dec. 4, 2001
6306674 Method for etching multilayer compound semiconductor material Oct. 23, 2001
6159834 Method of forming a gate quality oxide-compound semiconductor structure Dec. 12, 2000
6001722 Selective metallization/deposition for semiconductor devices Dec. 14, 1999
5935650 Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system Aug. 10, 1999
5877071 Masking methods during semiconductor device fabrication Mar. 2, 1999
5700703 Method of fabricating buried control elements in semiconductor devices Dec. 23, 1997
5686350 Method for fabricating defect-free compound semiconductor thin film on dielectric thin film Nov. 11, 1997
5581571 Semiconductor devices and methods Dec. 3, 1996
5559058 Method for producing native oxides on compound semiconductors Sep. 24, 1996
5550081 Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment Aug. 27, 1996
5425043 Semiconductor laser Jun. 13, 1995
5412246 Low temperature plasma oxidation process May. 2, 1995
5403775 Method of making semiconductor devices and techniques for controlled optical confinement Apr. 4, 1995
5353295 Semiconductor laser device with coupled cavities Oct. 4, 1994
5330935 Low temperature plasma oxidation process Jul. 19, 1994
5327448 Semiconductor devices and techniques for controlled optical confinement Jul. 5, 1994
5214003 Process for producing a uniform oxide layer on a compound semiconductor substrate May. 25, 1993
4684541 Samarium-promoted oxidation of silicon and gallium arsenide surfaces Aug. 4, 1987
4291327 MOS Devices Sep. 22, 1981
4268535 Process for growing a superficial dielectric structure upon a substrate, made of a chemical compound, comprising at least two elements May. 19, 1981
4216036 Self-terminating thermal oxidation of Al-containing group III-V compound layers Aug. 5, 1980
4172906 Method for passivating III-V compound semiconductors Oct. 30, 1979
4170666 Method for reducing surface recombination velocities in III-V compound semiconductors Oct. 9, 1979











 
 
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