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Class Information
Number: 257/E21.285
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Formed by oxidation (epo) > Of semiconductor material, e.g., by oxidation of semiconductor body itself (epo) > By thermal oxidation (epo) > Of silicon (epo)
Description: This subclass is indented under subclass E21.284. This subclass is substantially the same in scope as ECLA classification H01L21/316C2B2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7534730 |
Producing method of semiconductor device and substrate processing apparatus |
May. 19, 2009 |
| 7517814 |
Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently |
Apr. 14, 2009 |
| 7488652 |
Manufacturing method of gate oxidation films |
Feb. 10, 2009 |
| 7361613 |
Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method |
Apr. 22, 2008 |
| 7332448 |
Manufacturing method of semiconductor device and semiconductor manufacturing device |
Feb. 19, 2008 |
| 7304002 |
Method of oxidizing member to be treated |
Dec. 4, 2007 |
| 7282457 |
Apparatus for stabilizing high pressure oxidation of a semiconductor device |
Oct. 16, 2007 |
| 7208357 |
Template layer formation |
Apr. 24, 2007 |
| 7192887 |
Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same |
Mar. 20, 2007 |
| 7141514 |
Selective plasma re-oxidation process using pulsed RF source power |
Nov. 28, 2006 |
| 7109131 |
System and method for hydrogen-rich selective oxidation |
Sep. 19, 2006 |
| 7071073 |
Process for manufacturing low-cost and high-quality SOI substrates |
Jul. 4, 2006 |
| 7064084 |
Oxide film forming method |
Jun. 20, 2006 |
| 7060630 |
Method of forming isolation film of semiconductor device |
Jun. 13, 2006 |
| 7056816 |
Method for manufacturing semiconductor device |
Jun. 6, 2006 |
| 7053007 |
Method for fabricating semiconductor integrated circuit device |
May. 30, 2006 |
| 7049664 |
Semiconductor device structures formed by ion-assisted oxidation |
May. 23, 2006 |
| 7033874 |
Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film |
Apr. 25, 2006 |
| 7030045 |
Method of fabricating oxides with low defect densities |
Apr. 18, 2006 |
| 7030038 |
Low temperature method for forming a thin, uniform oxide |
Apr. 18, 2006 |
| 7030036 |
Method of forming oxide layer in semiconductor device |
Apr. 18, 2006 |
| 7018879 |
Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH.sub.3 nitridation and post-deposition rapid thermal annealing |
Mar. 28, 2006 |
| 6987056 |
Method of forming gates in semiconductor devices |
Jan. 17, 2006 |
| 6984267 |
Manufacture system for semiconductor device with thin gate insulating film |
Jan. 10, 2006 |
| 6974779 |
Interfacial oxidation process for high-k gate dielectric process integration |
Dec. 13, 2005 |
| 6975018 |
Semiconductor device |
Dec. 13, 2005 |
| 6955996 |
Method for stabilizing high pressure oxidation of a semiconductor device |
Oct. 18, 2005 |
| 6933181 |
Method for fabricating semiconductor device |
Aug. 23, 2005 |
| 6933235 |
Method for removing contaminants on a substrate |
Aug. 23, 2005 |
| 6933249 |
Method of fabricating semiconductor device |
Aug. 23, 2005 |
| 6930062 |
Methods of forming an oxide layer in a transistor having a recessed gate |
Aug. 16, 2005 |
| 6927169 |
Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing |
Aug. 9, 2005 |
| 6924239 |
Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using "spike" radical oxidation |
Aug. 2, 2005 |
| 6917093 |
Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits |
Jul. 12, 2005 |
| 6908827 |
Perovskite-type material forming methods, capacitor dielectric forming methods, and capacitor constructions |
Jun. 21, 2005 |
| 6900111 |
Method of forming a thin oxide layer having improved reliability on a semiconductor surface |
May. 31, 2005 |
| 6900071 |
Substrate and method for producing the same, and thin film structure |
May. 31, 2005 |
| 6897149 |
Method of producing electronic device material |
May. 24, 2005 |
| 6897513 |
Perovskite-type material forming methods, capacitor dielectric forming methods, and capacitor constructions |
May. 24, 2005 |
| 6893982 |
Method for forming a thin film, methods for forming a gate electrode and transistor using the same, and a gate electrode manufactured using the same |
May. 17, 2005 |
| 6887749 |
Multiple oxide thicknesses for merged memory and logic applications |
May. 3, 2005 |
| 6887759 |
LDD-type miniaturized MOS transistors |
May. 3, 2005 |
| 6884701 |
Process for fabricating semiconductor device |
Apr. 26, 2005 |
| 6884295 |
Method of forming oxynitride film or the like and system for carrying out the same |
Apr. 26, 2005 |
| 6881645 |
Method of preventing semiconductor layers from bending and semiconductor device formed thereby |
Apr. 19, 2005 |
| 6875558 |
Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI) |
Apr. 5, 2005 |
| 6869892 |
Method of oxidizing work pieces and oxidation system |
Mar. 22, 2005 |
| 6864125 |
Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 |
Mar. 8, 2005 |
| 6852645 |
High temperature interface layer growth for high-k gate dielectric |
Feb. 8, 2005 |
| RE38674 |
Process for forming a thin oxide layer |
Dec. 21, 2004 |
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