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Class Information
Number: 257/E21.283
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Formed by oxidation (epo) > Of semiconductor material, e.g., by oxidation of semiconductor body itself (epo)
Description: This subclass is indented under subclass E21.282. This subclass is substantially the same in scope as ECLA classification H01L21/316C2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.284 By thermal oxidation (epo) 70
257/E21.287 By anodic oxidation (epo) 12


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8501636 Method for fabricating silicon dioxide layer Aug. 6, 2013
8435906 Methods for forming conformal oxide layers on semiconductor devices May. 7, 2013
8389412 Finishing method for a silicon on insulator substrate Mar. 5, 2013
8367557 Method of forming an insulation film having low impurity concentrations Feb. 5, 2013
8288204 Methods for fabricating components with precise dimension control Oct. 16, 2012
8278175 Compressively stressed FET device structures Oct. 2, 2012
8263501 Silicon dioxide film fabricating process Sep. 11, 2012
8202805 Substrate processing method Jun. 19, 2012
8148271 Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method Apr. 3, 2012
7989364 Plasma oxidation processing method Aug. 2, 2011
7964515 Method of forming high-dielectric constant films for semiconductor devices Jun. 21, 2011
7939395 High-voltage SOI MOS device structure and method of fabrication May. 10, 2011
7923339 Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method Apr. 12, 2011
7811945 Selective plasma processing method Oct. 12, 2010
7795158 Oxidation method and apparatus for semiconductor process Sep. 14, 2010
7736963 Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device Jun. 15, 2010
7659175 DNA-based memory device and method of reading and writing same Feb. 9, 2010
7452826 Oxidation method and oxidation system Nov. 18, 2008
7446000 Method of fabricating semiconductor device having gate dielectrics with different thicknesses Nov. 4, 2008
7354785 Electroluminescent light emitting device Apr. 8, 2008
7304002 Method of oxidizing member to be treated Dec. 4, 2007
7122488 High density plasma process for the formation of silicon dioxide on silicon carbide substrates Oct. 17, 2006
7087499 Integrated antifuse structure for FINFET and CMOS devices Aug. 8, 2006
7033874 Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film Apr. 25, 2006
6916744 Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile Jul. 12, 2005
6909146 Bonded wafer with metal silicidation Jun. 21, 2005
6900144 Film-forming surface reforming method and semiconductor device manufacturing method May. 31, 2005
6835672 Selective oxidation for semiconductor device fabrication Dec. 28, 2004
6749686 Crystal growth method of an oxide and multi-layered structure of oxides Jun. 15, 2004
6617206 Method of forming a capacitor structure Sep. 9, 2003
6500735 Semiconductor device and method of manufacturing the same Dec. 31, 2002
6303499 Process for preparing semiconductor device Oct. 16, 2001
6221789 Thin oxides of silicon Apr. 24, 2001
6221788 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate Apr. 24, 2001
6140247 Semiconductor device manufacturing method Oct. 31, 2000
5972802 Prevention of edge stain in silicon wafers by ozone dipping Oct. 26, 1999
5958519 Method for forming oxide film on III-V substrate Sep. 28, 1999
5849627 Bonded wafer processing with oxidative bonding Dec. 15, 1998
5696023 Method for making aluminum gallium arsenide semiconductor device with native oxide layer Dec. 9, 1997
5567980 Native oxide of an aluminum-bearing group III-V semiconductor Oct. 22, 1996
5443863 Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge Aug. 22, 1995
5418017 Method of forming oxide film May. 23, 1995
5407614 Process of making pitch-based carbon fibers Apr. 18, 1995
5401357 Dry etching method Mar. 28, 1995
5373522 Semiconductor devices with native aluminum oxide regions Dec. 13, 1994
5360768 Method of forming oxide film Nov. 1, 1994
5334273 Wafer bonding using trapped oxidizing vapor Aug. 2, 1994
5266518 Method of manufacturing a semiconductor body comprising a mesa Nov. 30, 1993
5266135 Wafer bonding process employing liquid oxidant Nov. 30, 1993
5262360 AlGaAs native oxide Nov. 16, 1993

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