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Class Information
Number: 257/E21.281
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Deposition from gas or vapor (epo) > Deposition of aluminum oxide (epo) > On a silicon body (epo)
Description: This subclass is indented under subclass E21.28. This subclass is substantially the same in scope as ECLA classification H01L21/316B3B.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8455360 Method for fabricating storage node of semiconductor device Jun. 4, 2013
8202806 Method to avoid threshold voltage shift in thicker dielectric films Jun. 19, 2012
7902099 Dielectric layers and memory cells including metal-doped alumina Mar. 8, 2011
7759718 Method manufacturing capacitor dielectric Jul. 20, 2010
7683001 Dielectric layers and memory cells including metal-doped alumina Mar. 23, 2010
7538001 Transistor gate forming methods and integrated circuits May. 26, 2009
7531468 System and method for forming a gate dielectric May. 12, 2009
7473662 Metal-doped alumina and layers thereof Jan. 6, 2009
7312163 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates Dec. 25, 2007
7304004 System and method for forming a gate dielectric Dec. 4, 2007
7067442 Method to avoid threshold voltage shift in thicker dielectric films Jun. 27, 2006
7056835 Surface preparation prior to deposition Jun. 6, 2006
7053432 Enhanced surface area capacitor fabrication methods May. 30, 2006
7038264 Semiconductor device and method for manufacturing the same May. 2, 2006
7038284 Methods for making a dielectric stack in an integrated circuit May. 2, 2006
7037574 Atomic layer deposition for fabricating thin films May. 2, 2006
7015152 Method of film deposition, and fabrication of structures Mar. 21, 2006
6984592 Systems and methods for forming metal-doped alumina Jan. 10, 2006
6958277 Surface preparation prior to deposition Oct. 25, 2005
6955960 Decoupling capacitor for high frequency noise immunity Oct. 18, 2005
6951788 Method of manufacturing semiconductor device Oct. 4, 2005
6933225 Graded thin films Aug. 23, 2005
6929997 Triple metal line 1T/1C ferroelectric memory device and method for fabrication thereof Aug. 16, 2005
6924186 Method of forming a memory device and semiconductor device Aug. 2, 2005
6908827 Perovskite-type material forming methods, capacitor dielectric forming methods, and capacitor constructions Jun. 21, 2005
6900455 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication May. 31, 2005
6897513 Perovskite-type material forming methods, capacitor dielectric forming methods, and capacitor constructions May. 24, 2005
6894338 Rare earth metal oxide memory element based on charge storage and method for manufacturing same May. 17, 2005
6888189 Dielectric element including oxide-based dielectric film and method of fabricating the same May. 3, 2005
6884685 Radical oxidation and/or nitridation during metal oxide layer deposition process Apr. 26, 2005
6881642 Method of forming a MIM capacitor with metal nitride electrode Apr. 19, 2005
6861334 Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition Mar. 1, 2005
6858547 System and method for forming a gate dielectric Feb. 22, 2005
6858865 Doped aluminum oxide dielectrics Feb. 22, 2005
6849505 Semiconductor device and method for fabricating the same Feb. 1, 2005
6849464 Method of fabricating a multilayer dielectric tunnel barrier structure Feb. 1, 2005
6831315 Conformal thin films over textured capacitor electrodes Dec. 14, 2004
6824816 Process for producing metal thin films by ALD Nov. 30, 2004
6806145 Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer Oct. 19, 2004
6787421 Method for forming a dual gate oxide device using a metal oxide and resulting device Sep. 7, 2004
6787451 Semiconductor device and manufacturing method thereof Sep. 7, 2004
6785119 Ferroelectric capacitor and process for its manufacture Aug. 31, 2004
6780704 Conformal thin films over textured capacitor electrodes Aug. 24, 2004
6774050 Doped aluminum oxide dielectrics Aug. 10, 2004
6759252 Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials Jul. 6, 2004
6753618 MIM capacitor with metal nitride electrode materials and method of formation Jun. 22, 2004
6750502 Technique to quench electrical defects in aluminum oxide film Jun. 15, 2004
6743670 High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits Jun. 1, 2004
6730575 Methods of forming perovskite-type material and capacitor dielectric having perovskite-type crystalline structure May. 4, 2004

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