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Class Information
Number: 257/E21.28
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Deposition from gas or vapor (epo) > Deposition of aluminum oxide (epo)
Description: This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B3.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.281 On a silicon body (epo) 97

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8653573 Dielectric layers and memory cells including metal-doped alumina Feb. 18, 2014
8546923 Rigid power module suited for high-voltage applications Oct. 1, 2013
8513677 Display device having an aluminum complex oxide on metal layer for improving corrosion resistance Aug. 20, 2013
8481419 Method for producing a metal contact on a coated semiconductor substrate Jul. 9, 2013
8471237 Circuit board including a graphene film having contact region covering a recessed region and a patterned metal film covering the contact region and in direct electrical contact therewith, and Jun. 25, 2013
8455372 Method for cleaning and passivating gallium arsenide surface autologous oxide and depositing AL203 dielectric Jun. 4, 2013
8236578 Electronic device including a magneto-resistive memory device and a process for forming the electronic device Aug. 7, 2012
8193030 Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer Jun. 5, 2012
8173447 Magnetoresistive element and magnetic memory May. 8, 2012
8114732 Method for manufacturing twin bit structure cell with Al.sub.2O.sub.3/nano-crystalline Si layer Feb. 14, 2012
8071447 Semiconductor device manufacturing method Dec. 6, 2011
7994562 Memory apparatus Aug. 9, 2011
7994054 Semiconductor device having oxidized metal film and manufacture method of the same Aug. 9, 2011
7902099 Dielectric layers and memory cells including metal-doped alumina Mar. 8, 2011
7867919 Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer Jan. 11, 2011
7867924 Methods of reducing impurity concentration in isolating films in semiconductor devices Jan. 11, 2011
7863200 Process of vapor depositing glass layers for wafer-level hermetic encapsulation of electronic modules Jan. 4, 2011
7863202 High dielectric constant materials Jan. 4, 2011
7807584 Method of forming metallic oxide films using atomic layer deposition Oct. 5, 2010
7799680 Surface preparation prior to deposition on germanium Sep. 21, 2010
7704896 Atomic layer deposition of thin films on germanium Apr. 27, 2010
7683001 Dielectric layers and memory cells including metal-doped alumina Mar. 23, 2010
7659475 Method for backside surface passivation of solar cells and solar cells with such passivation Feb. 9, 2010
7645710 Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system Jan. 12, 2010
7635654 Magnetic tunnel junction device with improved barrier layer Dec. 22, 2009
7615830 Transistors with multilayered dielectric films Nov. 10, 2009
7473662 Metal-doped alumina and layers thereof Jan. 6, 2009
7411255 Dopant barrier for doped glass in memory devices Aug. 12, 2008
7351656 Semiconductor device having oxidized metal film and manufacture method of the same Apr. 1, 2008
7320943 Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Jan. 22, 2008
7303991 Atomic layer deposition methods Dec. 4, 2007
7235502 Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors Jun. 26, 2007
7196008 Aluminum oxide as liner or cover layer to spacers in memory device Mar. 27, 2007
7153785 Method of producing annealed wafer and annealed wafer Dec. 26, 2006
7141500 Methods for forming aluminum containing films utilizing amino aluminum precursors Nov. 28, 2006
7056784 Methods of forming capacitors by ALD to prevent oxidation of the lower electrode Jun. 6, 2006
7057244 Dielectric materials Jun. 6, 2006
7053009 Nanolaminate film atomic layer deposition method May. 30, 2006
7045438 Light emitting device, semiconductor device, and method of fabricating the devices May. 16, 2006
7045430 Atomic layer-deposited LaAlO3 films for gate dielectrics May. 16, 2006
7045855 Semiconductor device and corresponding fabrication method May. 16, 2006
7029985 Method of forming MIS capacitor Apr. 18, 2006
7022605 Atomic layer deposition methods Apr. 4, 2006
6984591 Precursor source mixtures Jan. 10, 2006
6974779 Interfacial oxidation process for high-k gate dielectric process integration Dec. 13, 2005
6949442 Methods of forming MIM capacitors Sep. 27, 2005
6936901 Semiconductor device and method for manufacturing same Aug. 30, 2005
6930013 Method of forming a capacitor of an integrated circuit device Aug. 16, 2005
6930059 Method for depositing a nanolaminate film by atomic layer deposition Aug. 16, 2005
6911402 Deposition method of a dielectric layer Jun. 28, 2005

1 2 3

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