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Class Information
Number: 257/E21.279
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Deposition from gas or vapor (epo) > Deposition of silicon oxide (epo) > On silicon body (epo)
Description: This subclass is indented under subclass E21.278. This subclass is substantially the same in scope as ECLA classification H01L21/316B2B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7605095 |
Heat processing method and apparatus for semiconductor process |
Oct. 20, 2009 |
| 7601604 |
Method for fabricating conducting plates for a high-Q MIM capacitor |
Oct. 13, 2009 |
| 7582555 |
CVD flowable gap fill |
Sep. 1, 2009 |
| 7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same |
Jul. 21, 2009 |
| 7560377 |
Plasma processes for depositing low dielectric constant films |
Jul. 14, 2009 |
| 7544625 |
Silicon oxide thin-films with embedded nanocrystalline silicon |
Jun. 9, 2009 |
| 7544614 |
Method of forming a coated film, method of forming an electronic device, and method of manufacturing an electron emission element |
Jun. 9, 2009 |
| 7541297 |
Method and system for improving dielectric film quality for void free gap fill |
Jun. 2, 2009 |
| 7538009 |
Method for fabricating STI gap fill oxide layer in semiconductor devices |
May. 26, 2009 |
| 7537971 |
Method for fabricating CMOS image sensor |
May. 26, 2009 |
| 7534711 |
System and method for direct etching |
May. 19, 2009 |
| 7531466 |
Metal organic deposition precursor solution synthesis and terbium-doped SiO.sub.2 thin film deposition |
May. 12, 2009 |
| 7531468 |
System and method for forming a gate dielectric |
May. 12, 2009 |
| 7524750 |
Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD |
Apr. 28, 2009 |
| 7521316 |
Methods of forming gate structures for semiconductor devices |
Apr. 21, 2009 |
| 7479688 |
STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
Jan. 20, 2009 |
| 7470632 |
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge |
Dec. 30, 2008 |
| 7468326 |
Method of cleaning a wafer |
Dec. 23, 2008 |
| 7456116 |
Gap-fill depositions in the formation of silicon containing dielectric materials |
Nov. 25, 2008 |
| 7446061 |
Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program |
Nov. 4, 2008 |
| 7442656 |
Method and apparatus for forming silicon oxide film |
Oct. 28, 2008 |
| RE40507 |
Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG |
Sep. 16, 2008 |
| 7416988 |
Semiconductor device and fabrication process thereof |
Aug. 26, 2008 |
| 7387926 |
Method for manufacturing CMOS image sensor |
Jun. 17, 2008 |
| 7388228 |
Display device and method of manufacturing the same |
Jun. 17, 2008 |
| 7354873 |
Method for forming insulation film |
Apr. 8, 2008 |
| 7352053 |
Insulating layer having decreased dielectric constant and increased hardness |
Apr. 1, 2008 |
| 7351643 |
Method of manufacturing a semiconductor device |
Apr. 1, 2008 |
| 7329947 |
Heat treatment jig for semiconductor substrate |
Feb. 12, 2008 |
| 7320943 |
Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same |
Jan. 22, 2008 |
| 7312127 |
Incorporating dopants to enhance the dielectric properties of metal silicates |
Dec. 25, 2007 |
| 7304004 |
System and method for forming a gate dielectric |
Dec. 4, 2007 |
| 7297640 |
Method for reducing argon diffusion from high density plasma films |
Nov. 20, 2007 |
| 7294588 |
In-situ-etch-assisted HDP deposition |
Nov. 13, 2007 |
| 7294583 |
Methods for the use of alkoxysilanol precursors for vapor deposition of SiO.sub.2 films |
Nov. 13, 2007 |
| 7247939 |
Metal filled semiconductor features with improved structural stability |
Jul. 24, 2007 |
| 7205248 |
Method of eliminating residual carbon from flowable oxide fill |
Apr. 17, 2007 |
| 7205249 |
CVD plasma assisted low dielectric constant films |
Apr. 17, 2007 |
| 7199061 |
Pecvd silicon oxide thin film deposition |
Apr. 3, 2007 |
| 7189796 |
Aromatic polycarbonate resin composition |
Mar. 13, 2007 |
| 7144783 |
Reducing gate dielectric material to form a metal gate electrode extension |
Dec. 5, 2006 |
| 7115501 |
Method for fabricating an integrated circuit device with through-plating elements and terminal units |
Oct. 3, 2006 |
| 7074708 |
Method of decreasing the k value in sioc layer deposited by chemical vapor deposition |
Jul. 11, 2006 |
| 7074625 |
Semiconductor device and method of manufacturing the same |
Jul. 11, 2006 |
| 7071128 |
Plasma CVD method |
Jul. 4, 2006 |
| 7071107 |
Method for manufacturing a semiconductor device |
Jul. 4, 2006 |
| 7067442 |
Method to avoid threshold voltage shift in thicker dielectric films |
Jun. 27, 2006 |
| 7067193 |
Structure and method for improved adhesion between two polymer films |
Jun. 27, 2006 |
| 7064062 |
Incorporating dopants to enhance the dielectric properties of metal silicates |
Jun. 20, 2006 |
| 7064077 |
Method for high aspect ratio HDP CVD gapfill |
Jun. 20, 2006 |
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