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Class Information
Number: 257/E21.277
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Deposition from gas or vapor (epo) > Deposition of carbon doped silicon oxide, e.g., sioc (epo)
Description: This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B8.

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8673770 Methods of forming conductive structures in dielectric layers on an integrated circuit device Mar. 18, 2014
8637403 Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics Jan. 28, 2014
8563443 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Oct. 22, 2013
8536073 Hardmask materials Sep. 17, 2013
8466073 Capping layer for reduced outgassing Jun. 18, 2013
8445377 Mechanically robust metal/low-k interconnects May. 21, 2013
8399358 Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment Mar. 19, 2013
8390135 Semiconductor device Mar. 5, 2013
8349746 Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure Jan. 8, 2013
8338315 Processes for curing silicon based low-k dielectric materials Dec. 25, 2012
8318584 Oxide-rich liner layer for flowable CVD gapfill Nov. 27, 2012
8258053 Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacers Sep. 4, 2012
8247332 Hardmask materials Aug. 21, 2012
8188576 Compound for filling small gaps in a semiconductor device, composition including the compound, and method of fabricating a semiconductor capacitor May. 29, 2012
8168543 Methods of forming a layer for barrier applications in an interconnect structure May. 1, 2012
8110879 Controlling lateral distribution of air gaps in interconnects Feb. 7, 2012
8093089 Methods of manufacturing image sensors including gettering regions Jan. 10, 2012
8076251 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus Dec. 13, 2011
8026175 Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device Sep. 27, 2011
8017522 Mechanically robust metal/low-.kappa. interconnects Sep. 13, 2011
8003549 Methods of forming moisture barrier for low K film integration with anti-reflective layers Aug. 23, 2011
7964442 Methods to obtain low k dielectric barrier with superior etch resistivity Jun. 21, 2011
7943531 Methods for forming a silicon oxide layer over a substrate May. 17, 2011
7923383 Method and apparatus for treating a semi-conductor substrate Apr. 12, 2011
7910475 Method for forming low dielectric constant fluorine-doped layers Mar. 22, 2011
7820551 Semiconductor device having fins FET and manufacturing method thereof Oct. 26, 2010
7781351 Methods for producing low-k carbon doped oxide films with low residual stress Aug. 24, 2010
7737052 Advanced multilayer dielectric cap with improved mechanical and electrical properties Jun. 15, 2010
7713854 Gate dielectric layers and methods of fabricating gate dielectric layers May. 11, 2010
7670892 Nitrogen based implants for defect reduction in strained silicon Mar. 2, 2010
7659206 Removal of silicon oxycarbide from substrates Feb. 9, 2010
7642202 Methods of forming moisture barrier for low k film integration with anti-reflective layers Jan. 5, 2010
7622400 Method for improving mechanical properties of low dielectric constant materials Nov. 24, 2009
7618893 Methods of forming a layer for barrier applications in an interconnect structure Nov. 17, 2009
7615480 Methods of post-contact back end of the line through-hole via integration Nov. 10, 2009
7605071 Controlling lateral distribution of air gaps in interconnects Oct. 20, 2009
7602048 Semiconductor device and semiconductor wafer having a multi-layered insulation film Oct. 13, 2009
7585752 Process for deposition of semiconductor films Sep. 8, 2009
7582970 Carbon containing silicon oxide film having high ashing tolerance and adhesion Sep. 1, 2009
7582555 CVD flowable gap fill Sep. 1, 2009
7582575 Method for forming insulation film Sep. 1, 2009
7531891 Semiconductor device May. 12, 2009
7498273 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II--remote plasma enhanced deposition processes Mar. 3, 2009
7491658 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality Feb. 17, 2009
7459388 Methods of forming dual-damascene interconnect structures using adhesion layers having high internal compressive stresses Dec. 2, 2008
7439185 Method for fabricating semiconductor device and semiconductor device Oct. 21, 2008
7420279 Carbon containing silicon oxide film having high ashing tolerance and adhesion Sep. 2, 2008
7416992 Method of patterning a low-k dielectric using a hard mask Aug. 26, 2008
7368381 Methods of forming materials May. 6, 2008
7357977 Ultralow dielectric constant layer with controlled biaxial stress Apr. 15, 2008

1 2 3 4 5 6

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