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Class Information
Number: 257/E21.276
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Deposition from gas or vapor (epo) > Deposition of halogen doped silicon oxide, e.g., fluorine doped silicon oxide (epo)
Description: This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B6.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8609555 Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfaces Dec. 17, 2013
8431955 Method and structure for balancing power and performance using fluorine and nitrogen doped substrates Apr. 30, 2013
8242544 Semiconductor structure having reduced amine-based contaminants Aug. 14, 2012
8212246 N-type doping in metal oxides and metal chalcogenides by electrochemical methods Jul. 3, 2012
8076251 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus Dec. 13, 2011
8034723 Film deposition apparatus and film deposition method Oct. 11, 2011
8026606 Interconnect layers without electromigration Sep. 27, 2011
8013344 Method of manufacturing semiconductor device and semiconductor device Sep. 6, 2011
7994500 Thin film transistor, method of manufacturing the same and flat panel display device having the same Aug. 9, 2011
7662712 UV blocking and crack protecting passivation layer fabricating method Feb. 16, 2010
7652354 Semiconductor devices and methods of manufacturing semiconductor devices Jan. 26, 2010
7642204 Methods of forming fluorine doped insulating materials Jan. 5, 2010
7622400 Method for improving mechanical properties of low dielectric constant materials Nov. 24, 2009
7579271 Method for forming low dielectric constant fluorine-doped layers Aug. 25, 2009
7569890 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device Aug. 4, 2009
7541246 Method of manufacturing semiconductor device Jun. 2, 2009
7524750 Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD Apr. 28, 2009
7476609 Forming of a cavity in an insulating layer Jan. 13, 2009
7468317 Method of forming metal line of semiconductor device Dec. 23, 2008
7390757 Methods for improving low k FSG film gap-fill characteristics Jun. 24, 2008
7247939 Metal filled semiconductor features with improved structural stability Jul. 24, 2007
7226875 Method for enhancing FSG film stability Jun. 5, 2007
7199041 Methods for fabricating an interlayer dielectric layer of a semiconductor device Apr. 3, 2007
7060323 Method of forming interlayer insulating film Jun. 13, 2006
7060193 Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits Jun. 13, 2006
7052552 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD May. 30, 2006
7037855 Method of forming fluorine-doped low-dielectric-constant insulating film May. 2, 2006
7026257 Method of manufacturing low dielectric film by a vacuum ultraviolet chemical vapor deposition Apr. 11, 2006
7015168 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation Mar. 21, 2006
7001854 Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures Feb. 21, 2006
6998340 Method of manufacturing semiconductor device Feb. 14, 2006
6984436 Graded material and method for synthesis thereof and method for processing thereof Jan. 10, 2006
6964919 Low-k dielectric film with good mechanical strength Nov. 15, 2005
6962883 Integrated circuit insulator and method Nov. 8, 2005
6960812 Method of forming an oxide film Nov. 1, 2005
6953608 Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up Oct. 11, 2005
6924238 Edge peeling improvement of low-k dielectric materials stack by adjusting EBR resistance Aug. 2, 2005
6914016 HDP-CVD deposition process for filling high aspect ratio gaps Jul. 5, 2005
6914015 HDP process for high aspect ratio gap filling Jul. 5, 2005
6911397 Method of forming dual damascene interconnection using low-k dielectric Jun. 28, 2005
6909195 Trench etch process for low-k dielectrics Jun. 21, 2005
6905938 Method of forming interconnect structure with low dielectric constant Jun. 14, 2005
6905968 Process for selectively etching dielectric layers Jun. 14, 2005
6905787 Light emitting element Jun. 14, 2005
6903029 Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure Jun. 7, 2005
6888189 Dielectric element including oxide-based dielectric film and method of fabricating the same May. 3, 2005
6875699 Method for patterning multilevel interconnects Apr. 5, 2005
6856018 Semiconductor device and method of manufacture thereof Feb. 15, 2005
6853003 Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same Feb. 8, 2005
6849536 Inter-metal dielectric patterns and method of forming the same Feb. 1, 2005

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