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Class Information
Number: 257/E21.275
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide based glass (epo) > Deposition from gas or vapor (epo) > Deposition of boron or phosphorus doped silicon oxide, e.g., bsg, psg, bpsg (epo)
Description: This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B4.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8617989 Liner property improvement Dec. 31, 2013
8617938 Device and method for boron diffusion in semiconductors Dec. 31, 2013
8563443 Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen Oct. 22, 2013
8513717 Semiconductor device and method for manufacturing the same Aug. 20, 2013
8481419 Method for producing a metal contact on a coated semiconductor substrate Jul. 9, 2013
8399952 Integrated circuit devices having a strontium ruthenium oxide interface Mar. 19, 2013
8384135 Phase-change random access memory device and method of manufacturing the same Feb. 26, 2013
8324014 Process for depositing boron compounds by CVD or PVD Dec. 4, 2012
8242544 Semiconductor structure having reduced amine-based contaminants Aug. 14, 2012
8072043 Semiconductor component Dec. 6, 2011
8021992 High aspect ratio gap fill application using high density plasma chemical vapor deposition Sep. 20, 2011
8021991 Technique to radiation-harden trench refill oxides Sep. 20, 2011
7981797 Phase-change random access memory device and method of manufacturing the same Jul. 19, 2011
7902582 Tantalum lanthanide oxynitride films Mar. 8, 2011
7863200 Process of vapor depositing glass layers for wafer-level hermetic encapsulation of electronic modules Jan. 4, 2011
7846795 Bit line of a semiconductor device and method for fabricating the same Dec. 7, 2010
7846850 Method of fabricating insulation layer and method of fabricating semiconductor device using the same Dec. 7, 2010
7790632 Methods of forming a phosphorus doped silicon dioxide-comprising layer Sep. 7, 2010
7786002 Method for producing a component comprising a conductor structure that is suitable for use at high frequencies Aug. 31, 2010
7642204 Methods of forming fluorine doped insulating materials Jan. 5, 2010
7537971 Method for fabricating CMOS image sensor May. 26, 2009
7534711 System and method for direct etching May. 19, 2009
7528059 Method for reducing polish-induced damage in a contact structure by forming a capping layer May. 5, 2009
7521375 Method of forming an oxinitride layer Apr. 21, 2009
7485928 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering Feb. 3, 2009
7482267 Ion implantation of spin on glass materials Jan. 27, 2009
7476609 Forming of a cavity in an insulating layer Jan. 13, 2009
7468317 Method of forming metal line of semiconductor device Dec. 23, 2008
RE40507 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG Sep. 16, 2008
7387926 Method for manufacturing CMOS image sensor Jun. 17, 2008
7351643 Method of manufacturing a semiconductor device Apr. 1, 2008
7320944 Deposition of phosphosilicate glass film Jan. 22, 2008
7297620 Method of forming an oxide layer including increasing the temperature during oxidation Nov. 20, 2007
7223706 Method for forming plasma enhanced deposited, fully oxidized PSG film May. 29, 2007
7220686 Process for contact opening definition for active element electrical connections May. 22, 2007
7199057 Method of eliminating boron contamination in annealed wafer Apr. 3, 2007
7067894 Semiconductor devices using anti-reflective coatings Jun. 27, 2006
7064087 Phosphorous-doped silicon dioxide process to customize contact etch profiles Jun. 20, 2006
7060193 Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits Jun. 13, 2006
7056833 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition Jun. 6, 2006
7052997 Method to form etch and/or CMP stop layers May. 30, 2006
7037821 Method for forming contact of semiconductor device May. 2, 2006
7037860 Modified source/drain re-oxidation method and system May. 2, 2006
7023046 Undoped oxide liner/BPSG for improved data retention Apr. 4, 2006
7015581 Low-K dielectric material system for IC application Mar. 21, 2006
7001854 Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures Feb. 21, 2006
6987041 Semiconductor device having both memory and logic circuit and its manufacture Jan. 17, 2006
6982223 Method of manufacturing a semiconductor device Jan. 3, 2006
6982228 Methods of etching a contact opening over a node location on a semiconductor substrate Jan. 3, 2006
6962855 Method of forming a porous material layer in a semiconductor device Nov. 8, 2005

1 2 3 4 5 6 7

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