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Class Information
Number: 257/E21.27
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo) > Carbon layer, e.g., diamond-like layer (epo)
Description: This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/314C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710628 Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites Apr. 29, 2014
8652946 Graphene layer formation on a carbon based substrate Feb. 18, 2014
8637413 Nonvolatile resistive memory element with a passivated switching layer Jan. 28, 2014
8455366 Use of an organic planarizing mask for cutting a plurality of gate lines Jun. 4, 2013
8426309 Graphene nanoelectric device fabrication Apr. 23, 2013
8399366 Method of depositing highly conformal amorphous carbon films over raised features Mar. 19, 2013
8367556 Use of an organic planarizing mask for cutting a plurality of gate lines Feb. 5, 2013
8309424 Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions Nov. 13, 2012
8299565 Semiconductor nanowires having mobility-optimized orientations Oct. 30, 2012
8264046 Synergy effect of alloying materials in interconnect structures Sep. 11, 2012
8217513 Remote plasma processing of interface surfaces Jul. 10, 2012
8084339 Remote plasma processing of interface surfaces Dec. 27, 2011
8084371 Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor Dec. 27, 2011
8008668 Doped diamond LED devices and associated methods Aug. 30, 2011
8008669 Programmable anti-fuse structure with DLC dielectric layer Aug. 30, 2011
7939367 Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate May. 10, 2011
7927964 Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions Apr. 19, 2011
7923377 Method for forming amorphous carbon film Apr. 12, 2011
7851288 Field effect transistor using carbon based stress liner Dec. 14, 2010
7842537 Stressed semiconductor using carbon and method for producing the same Nov. 30, 2010
7842622 Method of forming highly conformal amorphous carbon layer Nov. 30, 2010
7811906 Carbon-on-insulator substrates by in-place bonding Oct. 12, 2010
7799600 Doped diamond LED devices and associated methods Sep. 21, 2010
7790630 Silicon-doped carbon dielectrics Sep. 7, 2010
7781256 Semiconductor-on-diamond devices and associated methods Aug. 24, 2010
7781267 Enclosed nanotube structure and method for forming Aug. 24, 2010
7737049 Method for forming a structure on a substrate and device Jun. 15, 2010
7718081 Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes May. 18, 2010
7718544 Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient May. 18, 2010
7696106 Film formation method and apparatus for semiconductor process Apr. 13, 2010
7682991 Method of manufacturing silicon carbide semiconductor device Mar. 23, 2010
7648922 Fluorocarbon film and method for forming same Jan. 19, 2010
7642189 Synergy effect of alloying materials in interconnect structures Jan. 5, 2010
7638441 Method of forming a carbon polymer film using plasma CVD Dec. 29, 2009
7582499 Photo sensor and a method for manufacturing thereof Sep. 1, 2009
7575948 Method for operating photosensitive device Aug. 18, 2009
7557378 Boron aluminum nitride diamond heterostructure Jul. 7, 2009
7504344 Method of forming a carbon polymer film using plasma CVD Mar. 17, 2009
7470633 Method of forming a carbon polymer film using plasma CVD Dec. 30, 2008
7439177 Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing parasitic capacitance of inter-metal dielectric Oct. 21, 2008
7427563 Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures Sep. 23, 2008
7427807 Chip heat dissipation structure and manufacturing method Sep. 23, 2008
7390947 Forming field effect transistors from conductors Jun. 24, 2008
7341957 Masking structure having multiple layers including amorphous carbon layer Mar. 11, 2008
7335610 Ultraviolet blocking layer Feb. 26, 2008
7148156 Removable amorphous carbon CMP stop Dec. 12, 2006
7129180 Masking structure having multiple layers including an amorphous carbon layer Oct. 31, 2006
7115993 Structure comprising amorphous carbon film and method of forming thereof Oct. 3, 2006
7064078 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme Jun. 20, 2006
7033960 Multi-chamber deposition of silicon oxynitride film for patterning Apr. 25, 2006

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