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Class Information
Number: 257/E21.266
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic technique (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.27 Carbon layer, e.g., diamond-like layer (epo) 138
257/E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (epo) 407
257/E21.271 Composed of oxide or glassy oxide or oxide based glass (epo) 408
257/E21.292 Inorganic layer composed of nitride (epo) 156
257/E21.268 Of silicon (epo) 536


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4176372 Semiconductor device having oxygen doped polycrystalline passivation layer Nov. 27, 1979
4161743 Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat Jul. 17, 1979
4161744 Passivated semiconductor device and method of making same Jul. 17, 1979
4134125 Passivation of metallized semiconductor substrates Jan. 9, 1979
4123564 Method of producing semiconductor device Oct. 31, 1978
4086613 Semiconductor device having a passivated surface and method of manufacturing the device Apr. 25, 1978
4084986 Method of manufacturing a semi-insulating silicon layer Apr. 18, 1978
4062707 Utilizing multiple polycrystalline silicon masks for diffusion and passivation Dec. 13, 1977
4063275 Semiconductor device with two passivating layers Dec. 13, 1977
4062034 Semiconductor device having a hetero junction Dec. 6, 1977
4062033 Schottky barrier type semiconductor device Dec. 6, 1977
4047214 Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same Sep. 6, 1977
4042450 Method for the production of films having the desired configuration Aug. 16, 1977
4035198 Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits Jul. 12, 1977
4019248 High voltage junction semiconductor device fabrication Apr. 26, 1977
4014037 Semiconductor device Mar. 22, 1977
4001873 Semiconductor device Jan. 4, 1977
3976511 Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment Aug. 24, 1976

1 2 3 4 5 6 7










 
 
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